A convenient synthesis of Alkyltetramethylcyclopentadienes and Phenyltetramethylcyclopentadiene
作者:Richard S. Threlkel、John E. Bercaw
DOI:10.1016/s0022-328x(00)87959-0
日期:1977.8
Reactions of substituted tetramethylcyclopentadienes with molybdenum hexacarbonyl
作者:Zhihong Ma、Na Wang、Kaiming Guo、Xuezhong Zheng、Jin Lin
DOI:10.1016/j.ica.2013.01.010
日期:2013.4
The reactions of the substituted tetramethylcyclopentadienes [C5Me4HR] [R = ethyl (1), n-propyl (2), i-propyl (3), cyclopentyl (4), cyclohexyl (5), 4-NMe2Ph (6)] with Mo(CO)(6) in refluxing xylene gave the corresponding dinuclear metal carbonyl complexes [eta(5)-C5Me4R](2)Mo-2(CO)(6) (7-11), while similar treatment of [C5Me4H(4-NMe2Ph)] (6) with Mo(CO)(6) afforded an unexpected product [(eta(5)-C5Me4(4-NMe2Ph))MoO2] 2(mu-O) (12). All the new complexes were fully characterized. The molecular structures of 7, 8, 11 and 12 have been determined by X-ray single crystal diffraction. (C) 2013 Elsevier B.V. All rights reserved.
Davies, Alwyn G.; Goddard, Jeffrey P.; Lusztyk, Ewa, Journal of the Chemical Society. Perkin transactions II, 1982, p. 737 - 744
作者:Davies, Alwyn G.、Goddard, Jeffrey P.、Lusztyk, Ewa、Lusztyk, Janusz
DOI:——
日期:——
BIS(ALKYLTETRAMETHYLCYCLOPENTADIENYL)ZINC, PRECURSOR FOR CHEMICAL VAPOR DEPOSITION, AND PRODUCTION METHOD FOR ZINC-CONTAINING THIN FILM
申请人:KOJUNDO CHEMICAL LABORATORY CO., LTD.
公开号:US20210163519A1
公开(公告)日:2021-06-03
Provided is a precursor for chemical vapor deposition for depositing a zinc-containing thin film. Bis(alkyltetramethylcyclopentadienyl)zinc represented by the formula (1) which is liquid at room temperature and is therefore easy to handle (in the formula (1), R
1
and R
2
are alkyl group having 3 carbon atoms); a precursor for chemical vapor deposition comprising bis(alkyltetramethylcyclopentadienyl)zinc represented by the formula (2) (in the formula (2), R
3
and R
4
are alkyl group having 2-5 carbon atoms); and a production method for a zinc-containing thin film through chemical vapor deposition.