The present invention provides a resist underlayer film composition for lithography, containing a compound having an indenofluorene structure. This resist underlayer film composition is excellent in filling property, generates little outgas, and has high heat resistance.
本发明提供了一种用于光刻的抗蚀底层膜组合物,包含具有
茚并
芴结构的化合物。这种抗蚀底层膜组合物具有优异的填充性能,产生少量气体释放,并具有高耐热性。