硫喹诺酮单元的单一异构体IDOTT已通过新的合成途径合成,涉及区域选择性亲核加成,二羟基化,脱氢,氧化和异构化,并且IDOTT的结构已通过X射线晶体学分析明确证实。与报道的合成路线相比,这种新开发的策略具有广泛的底物适用性。而且,IDOTT显示出良好的空气稳定性和对化学反应的优异相容性,赋予了通过不同的交叉偶联反应构造共轭聚合物的潜力。以IDOTT为受体单位,三种供体-受体(DA)共轭聚合物,即通过Stille缩聚反应合成了PIDOTT-T,PIDOTT-TT和PIDOTT-BT。这三种聚合物显示出高的最高占据分子轨道(HOMO)(<-5.90 eV)和最低的未占据分子轨道(LUMO)(〜-4.04 eV)能级,并且在有机薄膜晶体管中表现出单极n型行为( OTFT)。在这些聚合物中,PIDOTT-BT提供了最佳的器件性能,电子迁移率高达0.45 cm 2 V -1 s -1,这对于具有喹啉
MONOMERIC, OLIGOMERIC AND POLYMERIC SEMICONDUCTORS CONTAINING FUSED RINGS AND THEIR DEVICES
申请人:LI Yuning
公开号:US20150295179A1
公开(公告)日:2015-10-15
The present invention describes the monomeric, oligomeric and polymeric materials comprising a fused-ring moiety, which can be used as organic semiconductors for use in electronic, optical, or optoelectronic devices such as organic thin film transistors and organic photovoltaics.
higher electronmobility. Polymer crystallinity, thin film disorder, and polymer packing conformation, which all influenced by side‐chain branchingposition, are proved to show significant influence on device performance. Our study not only reveals that π–π stacking distance is not the decisive factor on carriermobility in conjugatedpolymers but also demonstrates that side‐chain branching position
近来,聚合物场效应晶体管发展迅速。然而,人们对电荷传输机制和结构-性质关系的了解却很少。在这里,我们使用强电子不足的苯并二呋喃二酮基聚对苯撑亚乙烯基(BDPPV)作为聚合物主链,并开发了六种具有各种侧链支化位置的BDPPV基聚合物(BDPPV-C1至C6),以系统地研究侧链。链对设备性能的影响。所有聚合物均表现出环境稳定的n型传输行为,其最高电子迁移率高达1.40 cm 2 V -1 s -1。系统地研究了所有六种聚合物的薄膜形态和微观结构。我们的结果表明,随着分支位置从聚合物主链移开,链间π-π堆积距离减小,对于BDPPV-C4至C6,空前的π-π堆积距离降低至3.38Å。。然而,更近的π-π堆积距离并不总是与更高的电子迁移率相关。均受侧链支化位置影响的聚合物结晶度,薄膜无序性和聚合物堆积构象证明对器件性能具有显着影响。我们的研究不仅揭示了π–π堆积距离不是共轭聚合物中载流子迁移率的决定
Vinylene and benzo[<i>c</i>][1,2,5]thiadiazole: effect of the π-spacer unit on the properties of bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing polymers for n-channel organic field-effect transistors
作者:Thu Trang Do、Basanagouda B. Patil、Samarendra P. Singh、Soniya D. Yambem、Krishna Feron、Kostya (Ken) Ostrikov、John M. Bell、Prashant Sonar
DOI:10.1039/c8ra08890j
日期:——
PBIBDF-TBT based OFET devices, annealed at 180 °C, showed better performance with the highest electron mobility of 2.9 × 10−2 cm2 V s−1 whereas PBIBDF-TVT polymer exhibited 5.0 × 10−4 cm2 V s−1. The two orders of magnitude higher electron mobility of PBIBDF-TBT over PBIBDT-TVT is a clear indicator of the better charge transport ability of this polymer semiconductor arising from its higher crystallinity
两种基于 (3 E ,7 E )-3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2- b :4,5- b ']difuran-2,6(3 H ) 的聚合物, 7 H )-二酮 ( BIBDF ) 与 ( E )-2-(2-(thiophen-2-yl)vinyl)thiophene (TVT) 或二噻吩基苯并噻二唑 (TBT) 偶联,即PBIBDF-TVT和PBIBDF -TBT通过Stille偶联反应。研究了共聚物中苯并噻二唑或亚乙烯基-π间隔基对光学性能、能级、电子器件性能和微观结构的影响。发现PBIBDF-TBT基于OFET器件,在180℃退火,表现出更好的性能,最高电子迁移率为2.9 × 10 -2 cm 2 V s -1而PBIBDF-TVT聚合物表现出5.0 × 10 -4 cm 2 V s -1。PBIBDF-TBT比PBIBDT-TVT高两个
(3E,8E)-3,8-Bis(2-oxoindolin-3-ylidene)naphtho-[1,2-b:5,6-b′]difuran-2,7(3H,8H)-dione (INDF) based polymers for organic thin-film transistors with highly balanced ambipolar charge transport characteristics
作者:Yunfeng Deng、Bin Sun、Yinghui He、Jesse Quinn、Chang Guo、Yuning Li
DOI:10.1039/c5cc03917g
日期:——
INDF polymers exhibit highly balanced ambipolar characteristics with hole and electron mobilities up to 0.51 cm2 V−1 s−1 and 0.50 cm2 V−1 s−1, respectively.
3,7-Bis((E)-2-oxoindolin-3-ylidene)-3,7-dihydrobenzo[1,2-b:4,5-b′]dithiophene-2,6-dione (IBDT) based polymer with balanced ambipolar charge transport performance
作者:Yinghui He、Jesse Quinn、Yunfeng Deng、Yuning Li
DOI:10.1016/j.orgel.2016.05.003
日期:2016.8
novel acceptor buildingblock, 3,7-bis((E)-2-oxoindolin-3-ylidene)-3,7-dihydrobenzo[1,2-b:4,5-b′]dithiophene-2,6-dione (IBDT), is developed to construct a donor-acceptor polymer PIBDTBT-40. This polymer has favorable highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels for balancedambipolar charge transport. Organic thin film transistors (OTFTs) based
新型受体构建基3,7-双((E)-2-氧代吲哚-3-亚基)-3,7-二氢苯并[1,2- b:4,5 - b' ]二噻吩-2,6-开发了二酮(IBDT)来构建供体-受体聚合物PIBDTBT-40。该聚合物具有有利的最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)能级,以实现平衡的双极电荷传输。基于该聚合物的有机薄膜晶体管(OTFT)具有良好的平衡双极性特性,电子迁移率为0.14 cm 2 V -1 s -1,空穴迁移率为0.10 cm 2 V -1 s -1在底栅底部接触设备中。该聚合物是用于可溶液处理的有机电子产品(如类似CMOS的逻辑电路)的有前途的半导体。