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α-(p-methylbenzenesulfonyl)isobutyrophenone | 74074-84-3

中文名称
——
中文别名
——
英文名称
α-(p-methylbenzenesulfonyl)isobutyrophenone
英文别名
α-(p-methylbenzensulfonyl)isobutyrophenone;α-(p-Toluenesulfonyl)isobutyrophenone;α-(p-tolylsulfonyl)isobutyrophenone;2-methyl-1-phenyl-2-tosylpropan-1-one;2-methyl-2-(p-toluenesulfonyl)propiophenone;1-Propanone, 2-methyl-2-[(4-methylphenyl)sulfonyl]-1-phenyl-;2-methyl-2-(4-methylphenyl)sulfonyl-1-phenylpropan-1-one
α-(p-methylbenzenesulfonyl)isobutyrophenone化学式
CAS
74074-84-3
化学式
C17H18O3S
mdl
——
分子量
302.394
InChiKey
WBXCFSRAWFNBHW-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    48-53 °C
  • 沸点:
    158-163 °C(Press: 0.01 Torr)
  • 密度:
    1.179±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    3.5
  • 重原子数:
    21
  • 可旋转键数:
    4
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.24
  • 拓扑面积:
    59.6
  • 氢给体数:
    0
  • 氢受体数:
    3

反应信息

  • 作为反应物:
    描述:
    α-(p-methylbenzenesulfonyl)isobutyrophenone偶氮二异丁腈1,3-二甲基-2-苯基-2H-苯并咪唑苯硫酚 作用下, 以 四氢呋喃 为溶剂, 反应 45.0h, 以61.4%的产率得到异丁酰苯
    参考文献:
    名称:
    Thiophenol-promoted radical chain reduction of .alpha.-substituted isobutyrophenones by 1,3-dimethyl-2-phenylbenzimidazoline
    摘要:
    The reductions of alpha-haloacetophenones and alpha-halopropiophenones by 1,3-dimethyl-2-phenylbenzimidazoline (DMBI) have been reported to proceed via an electron-transfer free-radical chain mechanism. The reduction of alpha-haloisobutyrophenones did not proceed by the chain sequence. We now report that initiated reductions of alpha-bromo- and alpha-chloroisobutyrophenones (IIIa,b) have been found to be promoted by the addition of thiophenol. Isobutyrophenone was formed as the major product via a free-radical chain process. During the PhSH-promoted DMBI reduction of IIIa,b a minor product, alpha-(phenylthio)isobutyrophenone (IV), was also formed via nucleophilic substitution. The chain propagation steps involve the efficient hydrogen atom transfers between PhCOCMe2. and PhSH and between PhS. and DMBI. The facile hydrogen transfer between PhS. and DMBI was confirmed by carrying out the radical-chain reduction of PhSSPh with DMBI.
    DOI:
    10.1021/jo00028a048
  • 作为产物:
    描述:
    异丁酰苯 、 copper(II) bis(trifluoromethanesulfonate) 、 caesium carbonate 作用下, 以 二氯甲烷甲苯 为溶剂, 反应 20.0h, 生成 α-(p-methylbenzenesulfonyl)isobutyrophenone
    参考文献:
    名称:
    对甲苯磺酰基甲基异氰酸酯作为磺酰化剂在与α-溴羰基化合物反应中的意外作用
    摘要:
    的反应p -toluenesulfonylmethyl胩(TOSMIC)用α-溴代化合物有效地导致α-磺化酮,酯和酰胺的报道,其中TOSMIC作为磺酰化剂的显式的新角色被揭露首次。通过对照实验和DFT计算进行的机理研究表明,该反应是由Cu(OTf)2催化的TosMIC水合引发的,形成了甲酰胺中间体,该中间体在Cs 2 CO 3添加剂的介导下易于进行C-S键裂解。
    DOI:
    10.1021/acs.joc.6b00844
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文献信息

  • Electron transfer processes. 34. Reactions of .alpha.-halo ketones with nucleophiles
    作者:Glen A. Russell、Francisco Ros
    DOI:10.1021/ja00294a050
    日期:1985.4
    On etudie les reactions des chlorures de p-nitro- ou p-cyano phenacyle ou de leurs derives dimethyl-1,1 avec divers nucleophiles
    关于对硝基苯甲酰氯苯甲酰氯苯甲酰苯甲酰氯的研究反应,衍生二甲基-1,1 avec divers 亲核试剂
  • Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
    申请人:——
    公开号:US20040167322A1
    公开(公告)日:2004-08-26
    A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
    一种化学放大型抗蚀组合物,包括在苯环上的2-位含有长链烷氧基基团的特定苯磺酰二氮甲烷,具有许多优点,包括提高分辨率,改善焦点宽度,即使在长期PED上也减少线宽变化或形状退化,涂层、显影和剥离后减少残留物,并在显影后改善图案轮廓,因此适用于微加工。
  • Pretreatment compositions
    申请人:Powell B. David
    公开号:US20060286484A1
    公开(公告)日:2006-12-21
    A pretreatment composition of: (a) at least one compound having structure VI V 1 —Y—V 2 VI wherein Y is selected from the group consisting of S, O, NR 2 , (HOCH) p , and each R 1 is independently selected from H, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group or a halogen, each R 2 is independently H, SH, CH 3 , C 2 H 5 , and a linear or branched C 1 -C 4 alkyl group containing a thiol group; and wherein V 1 and V 2 are independently selected from wherein, m is independently an integer from 0 to 4 with the proviso that m can =0 only when Y═ n is an integer from 1 to 5; p is an integer of from 1 to 4, and each R 1 is defined as above; (b) at least one organic solvent, and optionally, (c) at least one adhesion promoter; wherein the amount of the compound of Structure VI present in the composition is effective to inhibit residue from forming when the photosensitive composition is coated on a substrate and the coated substrate is processed to form an image thereon.
    预处理组合物包括:(a)至少一种具有结构VIV1—Y—V2VI的化合物,其中Y选自S、O、NR2、(HOCH)p和each R1,每个R1独立选自H、烷基、烯基、炔基、烷氧基或卤素,每个R2独立为H、SH、CH3、C2H5和含巯基的直链或支链C1-C4烷基;其中V1和V2独立选自,其中m独立为0到4的整数,条件是m只能为0当Y=n为1到5的整数;p为1到4的整数,每个R1如上定义;(b)至少一种有机溶剂,以及可选地(c)至少一种促进粘附的物质;其中,组合物中存在的结构VI化合物的量足以抑制光敏组合物涂布在基材上并在涂覆的基材上形成图像时形成残留物。
  • Photoacid generators, chemically amplified resist compositions, and patterning process
    申请人:Ohsawa Youichi
    公开号:US20070292768A1
    公开(公告)日:2007-12-20
    A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.
    一种光酸发生剂的化学式为(1)。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时,可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。
  • POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    申请人:NISHI Tsunehiro
    公开号:US20100062374A1
    公开(公告)日:2010-03-11
    A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.
    一种正性光刻胶组合物包括(A)在酸的作用下在碱性显影剂中变得可溶的树脂组分和(B)酸发生剂。树脂(A)是一种聚合物,包含由式(1)表示的非离去羟基的重复单元,其中R1为H、甲基或三氟甲基,X为单键或亚甲基,m为1或2,并且羟基连接到次级碳原子。当通过光刻工艺处理时,该组合物在分辨率方面得到改善。
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