CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
申请人:Ichikawa Koji
公开号:US20100330497A1
公开(公告)日:2010-12-30
The present invention provides a resist composition giving a resist pattern excellent in CD uniformity and focus margin. A chemically amplified photoresist composition comprises a resin (A) and an acid generator (B), and the resin (A) contains, as a part or an entirety thereof, a copolymer (A1) which is obtained by polymerizing at least: a (meth) acrylic monomer (a1) having C
5-20
alicyclic hydrocarbon group which becomes soluble in an aqueous alkali solution by the action of an acid; a (meth) acrylic monomer (a2) having a hydroxy group-containing adamantyl group; and a (meth) acrylic monomer (a3) having a lactone ring, and the copolymer (A1) has a weight-average molecular weight of 2500 or more and 5000 or less, and a content of the copolymer (A1) is not less than 50 parts by mass with respect to 100 parts by mass of the resin (A).
本发明提供了一种抗蚀剂组合物,可提供具有CD均匀性和对焦余地的抗蚀剂图案。一种化学放大光阻组合物包括树脂(A)和酸发生剂(B),其中树脂(A)至少包含以下共聚物(A1)的一部分或全部:通过聚合至少得到的(甲基)丙烯酸酯单体(a1),其具有C5-20萜环烃基团,通过酸的作用在水性碱溶液中变得溶解;具有含羟基的金刚烷基团的(甲基)丙烯酸酯单体(a2);以及具有内酯环的(甲基)丙烯酸酯单体(a3),且共聚物(A1)的重均分子量为2500或更高但不超过5000,且共聚物(A1)的含量相对于树脂(A)的100质量份不少于50质量份。