Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.
The present invention relates to a tantalum compound represented by the following formula (1)
(In the formula, R
1
represents a straight-chain alkyl group having from 2 to 6 carbon atoms),
or a tantalum compound represented by the general formula (2)
(In the formula, R
2
represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.
The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6)
(In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R
3
to R
6
represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like) as a raw material.
本发明的目的是提供一种新型
钽化合物,能够选择性地形成不含卤素等的含
钽薄膜,以及含有所需元素的各种
钽含薄膜和其制备方法,并进一步提供一种稳定形成含有所需元素的
钽含薄膜的方法。本发明涉及以下式(1)所表示的
钽化合物(在式中,R1表示具有2至6个碳原子的直链烷基),或以下通式(2)所表示的
钽化合物(在式中,R2表示具有2至6个碳原子的直链烷基),以及其制备方法。本发明还涉及使用以下通式(6)所表示的
钽化合物(在式中,j、k、m和n为1至5的整数,且j+k=5和m+n=5,R3至R6表示氢原子、具有1至6个碳原子的烷基等)作为原料形成含
钽薄膜。