[3,5-Bis[1,1,1,3,3,3-hexafluoro-2-[(2-methylpropan-2-yl)oxycarbonyloxy]propan-2-yl]cyclohexyl] 2-methylprop-2-enoate | 1181818-33-6

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: [3,5-Bis[1,1,1,3,3,3-hexafluoro-2-[(2-methylpropan-2-yl)oxycarbonyloxy]propan-2-yl]cyclohexyl] 2-methylprop-2-enoate
• 英文别名: [3,5-bis[1,1,1,3,3,3-hexafluoro-2-[(2-methylpropan-2-yl)oxycarbonyloxy]propan-2-yl]cyclohexyl] 2-methylprop-2-enoate
• CAS: 1181818-33-6
• 化学式: C₂₆H₃₂F₁₂O₈
• 分子量: 700.516
• InChiKey: CEMRHGMOUHWAEL-UHFFFAOYSA-N

物化性质

• 沸点：
  470.5±45.0 °C(Predicted)
• 密度：
  1.36±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  9.3
• 重原子数：
  46
• 可旋转键数：
  13
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.81
• 拓扑面积：
  97.4
• 氢给体数：
  0
• 氢受体数：
  20

反应信息

• 作为反应物：
  描述：

  [3,5-Bis[1,1,1,3,3,3-hexafluoro-2-[(2-methylpropan-2-yl)oxycarbonyloxy]propan-2-yl]cyclohexyl] 2-methylprop-2-enoate 在 水 、 sodium hydroxide 作用下， 以 甲醇 、 乙腈 为溶剂， 反应 36.0h， 生成
  参考文献：
  名称：

  JP2023/33318

  摘要：

  公开号：
• 作为产物：
  描述：

  3,5-bis(1,1,1,3,3,3-hexafluoro-2-hydroxypropan-2-yl)cyclohexyl methacrylate 、 二碳酸二叔丁酯 在 4-二甲氨基吡啶 、 三乙胺 作用下， 以 四氢呋喃 为溶剂， 以80%的产率得到[3,5-Bis[1,1,1,3,3,3-hexafluoro-2-[(2-methylpropan-2-yl)oxycarbonyloxy]propan-2-yl]cyclohexyl] 2-methylprop-2-enoate
  参考文献：
  名称：

  Compound, fluorine-containing polymer, radiation-sensitive resin composition and method for producing compound

  摘要：

  一个化合物具有以下通式（1）。R0代表具有1至10个碳原子的(n+1)-价线性或支链脂肪烃基或类似物。R1代表氢原子、甲基或三氟甲基基团。R2代表单键或类似物。R3代表具有1至4个碳原子的线性或支链烷基或类似物。X代表具有1至10个碳原子的线性或支链氟代烷基，n为1至5的整数。

  公开号：

  US08530692B2

文献信息

• Compound, fluorine-containing polymer, radiation-sensitive resin composition and method for producing compound
  申请人：Matsumura Nobuji

  公开号：US08530692B2

  公开（公告）日：2013-09-10

  A compound has a following general formula (1). R0 represents an (n+1)-valent linear or branched aliphatic hydrocarbon group having 1 to 10 carbon atoms, or the like. R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R2 represents a single bond or the like. R3 represent a linear or branched alkyl group having 1 to 4 carbon atoms or the like. X represents a linear or branched fluoroalkylene group having 1 to 10 carbon atoms, and n is an integer from 1 to 5.

  一个化合物具有以下通式（1）。R0代表具有1至10个碳原子的(n+1)-价线性或支链脂肪烃基或类似物。R1代表氢原子、甲基或三氟甲基基团。R2代表单键或类似物。R3代表具有1至4个碳原子的线性或支链烷基或类似物。X代表具有1至10个碳原子的线性或支链氟代烷基，n为1至5的整数。
• Polymer for forming resist protection film, composition for forming resist protection film, and method of forming patterns of semiconductor devices using the composition
  申请人：Dongjin Semichem Co., Ltd.

  公开号：EP2402377B1

  公开（公告）日：2013-06-26
• RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD
  申请人：MATSUMURA Nobuji

  公开号：US20110151378A1

  公开（公告）日：2011-06-23

  A radiation-sensitive resin composition for liquid immersion lithography includes a resin component, a photoacid generator and a solvent. The resin component includes an acid-dissociable group-containing resin in an amount of more than 50% by mass. The acid-dissociable group-containing resin includes a repeating unit that includes a fluorine atom and an acid-dissociable group in a side chain of the repeating unit.
• POLYMER FOR FORMING RESIST PROTECTION FILM, COMPOSITION FOR FORMING RESIST PROTECTION FILM, AND METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES USING THE COMPOSITION
  申请人：Park Jong Kyoung

  公开号：US20120003589A1

  公开（公告）日：2012-01-05

  A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, R 1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH 3 ), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, R 2 is a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.
• RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN
  申请人：SAKAKIBARA Hirokazu

  公开号：US20120070783A1

  公开（公告）日：2012-03-22

  A radiation sensitive resin composition capable of forming a photoresist film which has excellent basic resist performances concerning sensitivity, LWR, development defects, etc., gives a satisfactory pattern shape, has an excellent depth of focus, is reduced in the amount of components dissolving in a liquid for immersion exposure which is in contact with the film during immersion exposure, has a large receding contact angle with the liquid for immersion exposure, and is capable of forming a microfine resist pattern with high accuracy. The radiation sensitive resin composition contains (A) a polymer that comprises a repeating unit represented by formula (1) and a repeating unit having a fluorine atom and has an acid dissociable group in the side chain, and (B) a solvent. [In the formula (1), R 1 represents a hydrogen atom, methyl, or trifluoromethyl; and Z represents a group including a structure that generates an acid upon light irradiation.]