申请人:Mitsubishi Rayon Co., Ltd.
公开号:EP1304340A1
公开(公告)日:2003-04-23
A resist resin containing a monomer unit selected from the group consisting of the following Formulas (I) and (II):
wherein each of R1 and R2 represents a hydrogen atom, alkyl group or acid-deprotectable protecting group respectively, and
wherein a substituent R3 represents an alkyl group, or a functional group comprising an acid-deprotectable protecting group, m representing the number of R3 is 0 (non-substitution), 1, 2 or more, R3 may be different from each other, provided that m is 2 or more, and n represents an integer of 0 to 4, has no rough spots on the surface after etching and so has good dry etching resistance, and therefore the resist resin is preferably used as a photo resist for DUV.
一种抗蚀树脂,含有选自下式(I)和(II)的单体单元:
其中 R1 和 R2 分别代表氢原子、烷基或可酸水解保护基团,以及
其中取代基 R3 代表烷基或由可酸解保护基组成的官能团,代表 R3 数目的 m 为 0(非取代)、1、2 或更多,R3 可以彼此不同,但 m 必须为 2 或更多,n 代表 0 至 4 的整数,蚀刻后表面无粗糙斑点,因此具有良好的耐干蚀刻性,因此该光刻胶最好用作 DUV 光刻胶。