申请人:Hoechst-Roussel Pharmaceuticals, Inc.
公开号:US04835275A1
公开(公告)日:1989-05-30
There are disclosed compounds having the formula ##STR1## wherein n is 1, 2 or 3; X is hydrogen, loweralkyl, loweralkoxy, halogen, hydroxy, nitro, trifluoromethyl, NHCOR.sub.2 where R.sub.2 is loweralkyl, or NR.sub.3 R.sub.4 where R.sub.3 and R.sub.4 are independently hydrogen or loweralkyl; R is hydrogen or loweralkyl; R.sub.1 is hydrogen, loweralkyl, diloweralkylaminoloweralkyl, arylloweralkyl, diarylloweralkyl, furylloweralkyl, thienylloweralkyl, oxygen-bridged arylloweralkyl, oxygen-bridged diarylloweralkyl, oxygen-bridged furylloweralkyl or oxygen-bridged thienylloweralkyl; Y is C.dbd.O or CR.sub.5 OH where R.sub.5 is hydrogen or loweralkyl; Z is CH.sub.2 or C.dbd.CR.sub.6 R.sub.7 where R.sub.6 and R.sub.7 are independently hydrogen or loweralkyl; or Y and Z taken together is CR.sub.5 .dbd.CH where CR.sub.5 and CH correspond to Y and Z respectively; an optical antipode thereof, or a pharmaceutically acceptable acid addition salt thereof, which are useful for enhancing memory, methods for synthesizing them, and pharmaceutical compositions comprising an effective memory enhancing amount of such a compound.
公开了具有以下结构式的化合物##STR1##其中n为1、2或3;X为氢、低烷基、低烷氧基、卤素、羟基、硝基、三氟甲基、NHCOR.sub.2,其中R.sub.2为低烷基,或NR.sub.3R.sub.4,其中R.sub.3和R.sub.4独立地为氢或低烷基;R为氢或低烷基;R.sub.1为氢、低烷基、二低烷氨基低烷基、芳基低烷基、二芳基低烷基、呋喃基低烷基、噻吩基低烷基、氧桥芳基低烷基、氧桥二芳基低烷基、氧桥呋喃基低烷基或氧桥噻吩基低烷基;Y为C.dbd.O或CR.sub.5OH,其中R.sub.5为氢或低烷基;Z为CH.sub.2或C.dbd.CR.sub.6R.sub.7,其中R.sub.6和R.sub.7独立地为氢或低烷基;或Y和Z一起为CR.sub.5.dbd.CH,其中CR.sub.5和CH分别对应于Y和Z;其光学对映体或其药学上可接受的酸加盐,它们对增强记忆有用,方法用于合成它们,以及包含有效的增强记忆量的这种化合物的制药组合物。