[EN] METHYLENE MALONAMIDE AND KETOACRYLAMIDE MONOMERS AND POLYMERIC COMPOSITIONS DERIVED FROM THEM [FR] MONOMÈRES DE MALONAMIDE MÉTHYLÈNE ET DE CÉTOACRYLAMIDE ET COMPOSITIONS POLYMÈRES DÉRIVÉES DE CEUX-CI
malonic amides and malonic esters under neutral reaction conditions. A variety of aliphatic alkenes and aromatic alkenes bearing bromine, chlorine, ester, 2-thienylcarboxylate, silyl, and phthalimide groups were all found to be suitable for this hydroalkylation. The combination of this method with Krapcho dealkoxycarbonylation realized a one-potsynthesis of β-substituted amide and ester from β-amide
POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME
申请人:FUJIMI INCORPORATED
公开号:EP2237311A1
公开(公告)日:2010-10-06
A polishing composition according to a first aspect of the present invention contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R1-N(-R2)-R3 in which R1, R2, and R3 each represent an alkyl group with or without a characteristic group, two of R1 to R3 may form a part of a heterocycle, and two of R1 to R3 may be identical and form a part of a heterocycle with the remaining one, Alternatively, the nitrogen-containing compound is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant. A polishing composition according to a second aspect of the present invention contains a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.
Polishing composition and polishing method using the same
申请人:Mizuno Takahiro
公开号:US10144849B2
公开(公告)日:2018-12-04
A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R1—N(—R2)—R3 in which R1, R2, and R3 each represent an alkyl group with or without a characteristic group, two of R1 to R3 may form a part of a heterocycle, and two of R1 to R3 may be identical and form a part of a heterocycle with the remaining one. Alternatively, the nitrogen-containing compound is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant. A polishing composition may contain a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.
Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films
申请人:L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
公开号:US11021793B2
公开(公告)日:2021-06-01
Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.