Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.
在光刻工艺中用于图案抗蚀剂薄膜的涂层组合物的生产方法,用于溶剂显影以反转图案。该方法包括:通过在非
醇类亲
水溶剂中
水解和冷凝可
水解
硅烷,获得
水解缩合产物的步骤;溶剂置换步骤,其中用疏
水性溶剂置换非
醇类亲
水溶剂以获得
水解缩合产物。生产半导体器件的方法,包括:将抗蚀剂组合物涂在基片上并形成抗蚀剂薄膜的步骤;对形成的抗蚀剂薄膜进行曝光和显影的步骤;将通过上述生产方法获得的组合物涂在步骤中显影期间或之后获得的图案抗蚀剂薄膜上,在图案之间形成涂膜的步骤;通过蚀刻和反转图案去除图案抗蚀剂薄膜的步骤。使用 ArF 激光(波长 193 纳米)或 EUV(波长 13.5 纳米)进行曝光的生产方法。使用有机溶剂进行负显影的生产方法。