Di-<1-(cyclohexenyl)-propyl>-ether | 101885-07-8

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: Di-<1-(cyclohexenyl)-propyl>-ether
• 英文别名: Ethylcyclohexylmethylether；1-(1-cyclohexylpropoxy)propylcyclohexane
• CAS: 101885-07-8
• 化学式: C₁₈H₃₄O
• 分子量: 266.467
• InChiKey: AFHAFQJFVCUXGG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.7
• 重原子数：
  19
• 可旋转键数：
  6
• 环数：
  2.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  Bis-<1-(cyclohexen-(3)-yl)-allyl>-aether 在 钯 氢气 作用下， 以 甲醇 为溶剂， 生成 Di-<1-(cyclohexenyl)-propyl>-ether
  参考文献：
  名称：

  Kugatova,G.P. et al., Journal of general chemistry of the USSR, 1961, vol. 31, p. 556 - 561

  摘要：

  DOI：

文献信息

• Oxidation process of ethers
  申请人：Daicel Chemical Industries, Ltd.

  公开号：EP0878458A1

  公开（公告）日：1998-11-18

  An ether is oxidized with oxygen under an oxidation catalyst comprising an imide compound (such as N-hydroxyphthalimide) or the imide compound and a co-catalyst to produce the corresponding chain or cyclic ester or anhydride. The co-catalyst may be a transition metal compound. The above process provides a process for oxidizing an ether by oxygen efficiently to produce the corresponding oxide (such as an ester, an hydride) with high conversion and selectivity.

  醚在由亚胺化合物（如 N-羟基邻苯二甲酰亚胺）或亚胺化合物和助催化剂组成的氧化催化剂作用下与氧气氧化，生成相应的链状或环状酯或酸酐。助催化剂可以是过渡金属化合物。上述工艺提供了一种用氧气高效氧化醚的工艺，以高转化率和高选择性生成相应的氧化物（如酯、氢化物）。
• RESIN FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, COMPOSITION FOR FORMATION OF UPPER ANTIREFLECTIVE FILM, AND RESIST PATTERN FORMATION METHOD
  申请人：Natsume Norihiro

  公开号：US20100112475A1

  公开（公告）日：2010-05-06

  The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R 1 to R 14 independently represent a hydrogen atom, —OH, —COOH or —SO 3 H, provided that all of R 1 to R 7 or R 8 to R 14 do not represent a hydrogen atom in a molecule.)
• METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM
  申请人：MARUYAMA Ken

  公开号：US20130059252A1

  公开（公告）日：2013-03-07

  A method for forming a resist pattern includes providing a resist film. A protective film is provided on the resist film using a composition for forming the protective film. The composition includes a polymer and an organic solvent. The resist film on which the protective film is provided is exposed to irradiation with EUV light or an electron beam. The exposed resist film is developed.
• PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM
  申请人：FUJIFILM Corporation

  公开号：US20180011406A1

  公开（公告）日：2018-01-11

  A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.
• COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20170371244A1

  公开（公告）日：2017-12-28

  A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.