The present invention relates to a photo acid generator which has high transparency to exposure light and also has excellent heat stability in a photoresist composition for lithography using far ultraviolet light, especially light of ArF excimer laser. The photo acid generator contains a sulfonium salt compound represented by the following general formula (1):
1
wherein R
1
represents an alkylene group, or an alkylene group having an oxo group, R
2
represents a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group having an oxo group, or a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group, provided that either of R
1
and R
2
has an oxo group, and Y
−
represents a counter ion.
本发明涉及一种具有对紫外线透明度高并且在使用远紫外光(尤其是ArF准分子激光)的光刻用光阻组合物中具有优异的热稳定性的光酸发生剂。该光酸发生剂包含下式(1)所表示的烷基
硫鎓盐化合物:其中,R1表示烷基,或者具有氧代基的烷基,R2表示具有氧代基的直链、支链、单环、多环或桥环烷基,或者直链、支链、单环、多环或桥环烷基,只要R1和R2中的任意一个具有氧代基,Y-表示反离子。