2,2,3,3-Tetra-kis(hydroxymethyl)butan | 49846-74-4

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2,2,3,3-Tetra-kis(hydroxymethyl)butan
• 英文别名: 2,3-bis-hydroxymethyl-2,3-dimethyl-butane-1,4-diol；2,3-Bis(hydroxymethyl)-2,3-dimethylbutane-1,4-diol
• CAS: 49846-74-4
• 化学式: C₈H₁₈O₄
• 分子量: 178.229
• InChiKey: POIDTUGTVPSHSH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.2
• 重原子数：
  12
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  80.9
• 氢给体数：
  4
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  甲烷磺酸 、 2,2,3,3-Tetra-kis(hydroxymethyl)butan 在 吡啶 作用下， 生成 2,2,3,3-Tetra-kis(methansulfonyloxymethyl)butan
  参考文献：
  名称：

  Weinges,K. et al., Chemische Berichte, 1973, vol. 106, p. 2305 - 2309

  摘要：

  DOI：
• 作为产物：
  描述：

  2,2,3,3-tetraethylcarboxybutane 在 lithium aluminium tetrahydride 作用下， 以 四氢呋喃 为溶剂， 反应 24.0h， 生成 2,2,3,3-Tetra-kis(hydroxymethyl)butan
  参考文献：
  名称：

  催化合成对苯二酚的邻位全碳四元立体异构中心的对映选择性方法

  摘要：

  据报道，第一个通过手性磷酸介导的氧化脱对称性选择性控制四萜亚苄基乙缩醛的高对映选择性催化方案。这种有效的方法提供了一般访问...

  DOI：

  10.1039/c7cc00457e

文献信息

• RESIN-COATED METAL PIGMENT, AND PROCESS FOR PRODUCING SAME
  申请人：Asahi Kasei Chemicals Corporation

  公开号：EP2479224A1

  公开（公告）日：2012-07-25

  Disclosed is a resin-coated metal pigment comprising 100 parts by weight of a metal pigment and 0.1 to 50 parts by weight of a resin, wherein the resin is attached on the surface of the metal pigment. The resin-coated metal pigment is produced by circulating a portion of a slurry solution containing the metal pigment in an external-circulation type vessel during the resin coating treatment in a reaction vessel and applying a vibration to the external-circulation type vessel with an ultrasonic wave.

  本发明公开了一种树脂涂层金属颜料，它由 100 重量份的金属颜料和 0.1 至 50 重量份的树脂组成，其中树脂附着在金属颜料的表面。这种树脂涂层金属颜料是在反应容器中进行树脂涂层处理时，将含有金属颜料的浆状溶液的一部分在外循环型容器中循环，并用超声波对外循环型容器进行振动而制成的。
• Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2826826A1

  公开（公告）日：2015-01-21

  The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.

  本发明提供了一种用于形成涂层型 BPSG 薄膜的组合物，该组合物包括：由以下通式 (1) 所代表的硅酸作为骨架结构的一种或多种结构、由以下通式 (2) 所代表的磷酸作为骨架结构的一种或多种结构以及由以下通式 (3) 所代表的硼酸作为骨架结构的一种或多种结构。本发明可提供一种用于形成涂层型 BPSG 薄膜的组合物，该组合物在精细图案方面具有优异的粘附性，可通过剥离溶液轻松进行湿蚀刻，不会对半导体设备基板、涂层型有机薄膜或图案化过程中所需的主要由碳构成的 CVD 薄膜造成任何损害，并且通过在涂层过程中形成该组合物，可抑制颗粒的生成。
• Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172808B1

  公开（公告）日：2014-06-04
• Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172807B1

  公开（公告）日：2014-06-18
• Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process
  申请人：Ogihara Tsutomu

  公开号：US20100086872A1

  公开（公告）日：2010-04-08

  There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multi-layer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.