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1,1-bis-[2-(2-hydroxy-ethoxy)-ethoxy]-ethane | 78706-58-8

中文名称
——
中文别名
——
英文名称
1,1-bis-[2-(2-hydroxy-ethoxy)-ethoxy]-ethane
英文别名
1,1-Bis-[2-(2-hydroxy-aethoxy)-aethoxy]-aethan;Aethyliden-bis-diaethylenglykol;2-[2-[1-[2-(2-Hydroxyethoxy)ethoxy]ethoxy]ethoxy]ethanol;2-[2-[1-[2-(2-hydroxyethoxy)ethoxy]ethoxy]ethoxy]ethanol
1,1-bis-[2-(2-hydroxy-ethoxy)-ethoxy]-ethane化学式
CAS
78706-58-8
化学式
C10H22O6
mdl
——
分子量
238.281
InChiKey
XWMOYODWBFNKBH-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    350.0±32.0 °C(Predicted)
  • 密度:
    1.111±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    -1.2
  • 重原子数:
    16
  • 可旋转键数:
    12
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    77.4
  • 氢给体数:
    2
  • 氢受体数:
    6

反应信息

点击查看最新优质反应信息

文献信息

  • BLOCK COPOLYMERS
    申请人:NYCOMED IMAGING AS
    公开号:EP0748226A1
    公开(公告)日:1996-12-18
  • METHOD FOR CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20150221500A1
    公开(公告)日:2015-08-06
    The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution.
  • US5618528A
    申请人:——
    公开号:US5618528A
    公开(公告)日:1997-04-08
  • US5853713A
    申请人:——
    公开号:US5853713A
    公开(公告)日:1998-12-29
  • US9524863B2
    申请人:——
    公开号:US9524863B2
    公开(公告)日:2016-12-20
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