2-(11-bromoundecyl)-9-(tridecan-7-yl)anthra[2,1,9-def:6,5,10-d'e'f']diisoquinoline-1,3,8,10(2H,9H)-tetraone | 1437780-95-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 菲及其衍生物
• 英文名称: 2-(11-bromoundecyl)-9-(tridecan-7-yl)anthra[2,1,9-def:6,5,10-d'e'f']diisoquinoline-1,3,8,10(2H,9H)-tetraone
• CAS: 1437780-95-4
• 化学式: C₄₈H₅₇BrN₂O₄
• 分子量: 805.896
• InChiKey: ZUEGVMIGRBHMJJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  13.14
• 重原子数：
  55.0
• 可旋转键数：
  22.0
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  74.76
• 氢给体数：
  0.0
• 氢受体数：
  4.0

反应信息

• 作为反应物：
  描述：

  2-(11-bromoundecyl)-9-(tridecan-7-yl)anthra[2,1,9-def:6,5,10-d'e'f']diisoquinoline-1,3,8,10(2H,9H)-tetraone 、 亚磷酸三乙酯 反应 24.0h， 以98%的产率得到diethyl (11-(1,3,8,10-tetraoxo-9-(tridecan-7-yl)-3,8,9,10-tetrahydroanthra[2,1,9-def:6,5,10-d'e'f']diisoquinolin-2(1H)-yl)undecyl)phosphonate
  参考文献：
  名称：

  N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters

  摘要：

  AbstractThis work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n‐type and p‐type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.

  DOI：

  10.1002/adfm.201202888
• 作为产物：
  描述：

  1,11-二溴十一烷 、 N-(1-Hexylheptyl)perylene-3,4-dicarboxylic anhydride 9,10-dicarboximide 在 sodium hydride 作用下， 以 N,N-二甲基甲酰胺 、 mineral oil 为溶剂， 以49%的产率得到2-(11-bromoundecyl)-9-(tridecan-7-yl)anthra[2,1,9-def:6,5,10-d'e'f']diisoquinoline-1,3,8,10(2H,9H)-tetraone
  参考文献：
  名称：

  N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters

  摘要：

  AbstractThis work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n‐type and p‐type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.

  DOI：

  10.1002/adfm.201202888