diethyl (11-(1,3,8,10-tetraoxo-9-(tridecan-7-yl)-3,8,9,10-tetrahydroanthra[2,1,9-def:6,5,10-d'e'f']diisoquinolin-2(1H)-yl)undecyl)phosphonate | 1437780-96-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 菲及其衍生物
• 英文名称: diethyl (11-(1,3,8,10-tetraoxo-9-(tridecan-7-yl)-3,8,9,10-tetrahydroanthra[2,1,9-def:6,5,10-d'e'f']diisoquinolin-2(1H)-yl)undecyl)phosphonate
• CAS: 1437780-96-5
• 化学式: C₅₂H₆₇N₂O₇P
• 分子量: 863.087
• InChiKey: QZLODSGFZUPVKL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  14.02
• 重原子数：
  62.0
• 可旋转键数：
  27.0
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  110.29
• 氢给体数：
  0.0
• 氢受体数：
  7.0

反应信息

• 作为反应物：
  描述：

  diethyl (11-(1,3,8,10-tetraoxo-9-(tridecan-7-yl)-3,8,9,10-tetrahydroanthra[2,1,9-def:6,5,10-d'e'f']diisoquinolin-2(1H)-yl)undecyl)phosphonate 在 三甲基溴硅烷 、 水 作用下， 以 二氯甲烷 为溶剂， 反应 2.0h， 以95%的产率得到11-(6,8,17,19-Tetraoxo-18-tridecan-7-yl-7,18-diazaheptacyclo[14.6.2.22,5.03,12.04,9.013,23.020,24]hexacosa-1(23),2,4,9,11,13,15,20(24),21,25-decaen-7-yl)undecylphosphonic acid
  参考文献：
  名称：

  N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters

  摘要：

  AbstractThis work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n‐type and p‐type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.

  DOI：

  10.1002/adfm.201202888
• 作为产物：
  描述：

  N-(1-Hexylheptyl)perylene-3,4-dicarboxylic anhydride 9,10-dicarboximide 在 sodium hydride 作用下， 以 N,N-二甲基甲酰胺 、 mineral oil 为溶剂， 反应 24.0h， 生成 diethyl (11-(1,3,8,10-tetraoxo-9-(tridecan-7-yl)-3,8,9,10-tetrahydroanthra[2,1,9-def:6,5,10-d'e'f']diisoquinolin-2(1H)-yl)undecyl)phosphonate
  参考文献：
  名称：

  N-Type Self-Assembled Monolayer Field-Effect Transistors and Complementary Inverters

  摘要：

  AbstractThis work describes n‐type self‐assembled monolayer field‐effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N‐type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5 × 10−3 cm2 V−1 s−1 and on/off current ratios up to 105 are obtained. By implementing n‐type and p‐type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.

  DOI：

  10.1002/adfm.201202888