Decafluor-2,3-hexandion | 74728-96-4

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: Decafluor-2,3-hexandion
• 英文别名: Decafluorohexane-2,3-dione；1,1,1,4,4,5,5,6,6,6-decafluorohexane-2,3-dione
• CAS: 74728-96-4
• 化学式: C₆F₁₀O₂
• 分子量: 294.049
• InChiKey: DZFGENIXNVWMJN-UHFFFAOYSA-N

物化性质

• 沸点：
  59 °C
• 密度：
  1.666±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  18
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  34.1
• 氢给体数：
  0
• 氢受体数：
  12

反应信息

• 作为反应物：
  描述：

  Decafluor-2,3-hexandion 在 cesium fluoride 作用下， 反应 1.0h， 以83%的产率得到perfluoro-2-pentanone
  参考文献：
  名称：

  Ionic decarboxylation of perfluorinated ?-diketones

  摘要：

  DOI：

  10.1007/bf00959914
• 作为产物：
  描述：

  dodecafluoro-hex-2-ene 在 potassium permanganate 作用下， 以 水 、 丙酮 为溶剂， 反应 0.5h， 以39.5%的产率得到Decafluor-2,3-hexandion
  参考文献：
  名称：

  Partial oxidation of internal fluoroolefins by potassium permanganate

  摘要：

  DOI：

  10.1007/bf00961993

文献信息

• Reactions of 2H-2-oxo-phosphorinanone derivatives and dimethylphosphine oxide with perfluorinated mono- and di-ketones
  作者：A.A. Kadyrov、I. Neda、T. Kaukorat、A. Fischer、P.G. Jones、R. Schmutzler

  DOI：10.1016/0022-1139(94)03162-s

  日期：1995.5

  two isomers 12a and 12b was observed. Reaction of a mixture of 12a and 12b with water led to 2-hydroxy-2-oxo-triazaphosphorinan-4,6-dione (15) and two further perfluorinated products 13 and 14. Dimethylphosphine oxide (3) reacted with perfluoro-isobutylmethyl ketone (4) to give the perfluoroalkyl-substituted α-hydroxyphosphine oxide 16. In contrast to 7-12, compound 16 was shown to contain the P-C-OH

  5,6-苯并-1,3-二甲基-2- ħ -2-氧代- 1,3,2λ 4 -diazaphosphorinan -4-酮（1）和1,3,5-三甲基-2- ħ -2-氧代1,3,5-三氮杂- 2λ 4-磷酸二氢呋喃酮-4,6-二酮（2）与全氟异丁基甲基酮（4），全氟-1-甲基-2-异丙基二酮（5）和全氟-1-甲基-2-正丙基二酮反应（6）由于O-加成反应，通过形成POC键和氢原子从磷迁移到羰基碳原子而产生产物7-12。在2与6的反应中，观察到两个异构体12a和12b的形成。12a和12b的混合物与水的反应产生2-羟基-2-氧代-三氮杂膦酸-4,6-二酮（15）和另外两个全氟化产物13和14。二甲基氧化膦（3）与全氟异丁基甲基酮反应（4）得到全氟烷基取代的α-羟基膦氧化物16。与7-12相反，化合物16显示含有PC-OH片段而不是POC键。1 H，13 C和19 F NMR光谱。所有化合物均通过
• Synthesis of tricyclic ( λ5 ) -phosphoranes N-demethylation/N-alkylation reactions during the oxidative addition perfluorinated α-diketones to P-bis(2-chloroethyl)amino-substituted λ3P-compounds
  作者：Ion Neda、Christian Müller、Reinhard Schmutzler

  DOI：10.1016/s0022-1139(97)00079-1

  日期：1997.10

  In the reaction of various 2,3-dihydro-1,3,2-benzodiazaphosphorin-4( 1H)-ones with perfluorinated a-diketones, CF3C(:O)C(:O)Rf an oxidative addition reaction with concomitant N-alkylation of the CH3(N) atom, and formation of tricyclic phosphoranes was found to take place. In one case no N-alkylation reaction was observed and a perfluoropinacolyl spirophosphorane was formed instead. The course of the

  在各种2,3-二氢-1,3,2-苯并二氮杂磷蛋白-4（1 H）-酮与全氟α-二酮的反应中，CF 3 C（：O）C（：O）R f发生氧化加成反应伴随CH 3（N）原子的N-烷基化，发现三环磷烷的形成。在一种情况下，未观察到N-烷基化反应，而是形成了全氟频哪醇螺螺磷烷。反应过程主要取决于R f的空间需求和苯并二氮杂膦酰基酮的N -3取代基。
• Dry Etching Gas and Method of Dry Etching
  申请人：Sekiya Akira

  公开号：US20080274334A1

  公开（公告）日：2008-11-06

  A dry etching gas comprising a C 4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O 2 , O 3 , CO, CO 2 , CHF 3 , CH 2 F 2 , CF 4 , C 2 F 6 , and C 3 F 8 ; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.

  一种干法刻蚀气体，包括C4-6氟化合物，其具有醚键或羰基基团和分子中的一个或多个氟原子，仅由碳、氟和氧原子构成，其中氟原子与碳原子的比例（F/C）为1.9或更低（前提是该化合物既不是具有一个环状醚键和一个碳-碳双键的氟化合物，也不是具有一个羰基基团的饱和氟化合物）;混合干法刻蚀气体包括干法刻蚀气体和至少一种选自稀有气体、O2、O3、CO、CO2、CHF3、CH2F2、CF4、C2F6和C3F8的气体的气体;以及一种干法刻蚀方法，包括将这些干法刻蚀气体之一转化为等离子体，并用等离子体处理半导体材料。这些干法刻蚀气体可以安全使用，对全球环境的影响减少，并且可以高度选择性地干法刻蚀半导体材料以形成令人满意的图案形状。这种干法刻蚀方法采用这些干法刻蚀气体之一。
• DRY ETCHING GASES AND METHOD OF DRY ETCHING
  申请人：National Institute of Advanced Industrial Science and Technology

  公开号：EP1760769A1

  公开（公告）日：2007-03-07

  A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.

  一种干蚀刻气体，包括一种C4-6氟化合物，其分子中具有一个醚键或羰基和一个或多个氟原子，且仅由碳、氟和氧原子构成，其中氟原子数与碳原子数之比（F/C）为1.9 或更低（条件是该化合物既不是具有一个环醚键和一个碳碳双键的氟化合物，也不是具有一个羰基的饱和氟化合物）；一种混合干蚀刻气体，包括干蚀刻气体和至少一种选自稀有气体、O2、O3、CO、CO2、CHF3、CH2F2、CF4、C2F6 和 C3F8 组成的组的气体；以及一种干蚀刻方法，该方法包括将上述任一种干蚀刻气体转化为等离子体，并用该等离子体处理半导体材料。干蚀刻气体可以安全使用，对全球环境的影响较小，并能以较高的干蚀刻速率高度选择性地对半导体材料进行干蚀刻，以形成令人满意的图案形状。干蚀刻方法采用上述任何一种干蚀刻气体。
• Neue Phospholen‐ und Phosphepin‐Derivate aus λ ³ ‐Phosphorverbindungen und Hexafluoraceton oder perfluorierten α‐Diketonen
  作者：Alexander Kadyrov、Ion Neda、Thomas Kaukorat、Ralf Sonnenburg、Axel Fischer、Peter G. Jones、Reinhard Schmutzler

  DOI：10.1002/cber.19961290620

  日期：1996.6

  New Phospholene and Phosphepine Derivatives from λ3‐Phosphorus Compounds and Hexafluoroacetone or Perfluorinated α‐DiketonesThe reaction of the bis(2‐chloroethyl)amino‐substituted benzoxazaphosphorinone 1 with hexafluoroacetone (HFA) proceeds with insertion of the carbonyl group of HFA into the heterocycle of 1 to form the oxazaphosphepinedione 2. Triethyl phosphite (3) and triphenyl phosphite (4) react with the perfluorinated diketones 5 and 6 with formation of the pentaoxyphosphoranes 7–10 containing a dioxaphospholene ring system. The reaction of the (2‐chloroethyl)amino‐ and bis(2‐chloroethyl)amino‐substituted 1,3,5,2‐triazaphosphorinanediones 11–14 with the perfluorinated diketone C2F5C(:O)C(:O)CF3 (15) furnishes spirophosphorane derivatives with the dioxaphospholene ring system, 16 and 17, in two cases only. Compound 1 and 2‐[bis(2‐chloroethyl)‐amino]‐4H‐1,3,2‐benzodioxaphosphorin‐4‐one (18) react with the perfluorinated α‐diketones 5 and 6 with insertion of the diketones into the heterocycle of 1 and 18 with formation of compounds 19–22 containing dioxa‐ and oxazaphosphepinone ring systems. The expected oxidative addition of the diketones to λ3P with formation of spirophosphoranes was not observed. Compounds 19–22 were obtained as mixtures of isomers (19a/b–22a/b). Single crystal X‐ray structure analyses were conducted on 2 and 9. The seven‐membered ring of 2 displays a “tub” conformation, with the O and benzo C atoms lying out of the plane of the other four atoms. The two independent molecules of 9 are similar, but differ in the degree of distortion from trigonal‐bipyramidal geometry of phosphorus.