Thiophene-<i>S</i>
,<i>S</i>
-dioxidized Indophenine: A Quinoid-Type Building Block with High Electron Affinity for Constructing n-Type Polymer Semiconductors with Narrow Band Gaps
作者:Yunfeng Deng、Bin Sun、Yinghui He、Jesse Quinn、Chang Guo、Yuning Li
DOI:10.1002/anie.201508781
日期:2016.3.1
Three thiophene‐S,S‐dioxidized indophenine (IDTO) isomers, 3 a (E,E,E), 3 b (Z,E,E), and 3 c (Z,E,Z), were synthesized by oxidation of an indophenine compound. 3 b and 3 c could be converted into the most‐stable 3 a by heating at 110 °C. An IDTO‐containing conjugated polymer, PIDTOTT, was prepared using 3 a as a comonomer through a Stille coupling reaction, and it possesses a narrow band gap and low energy
三种噻吩-S,S-二氧化吲哚芬胺(IDTO)异构体3a(E,E,E),3b(Z,E,E)和3c(Z,E,Z)是通过氧化合成的。吲哚酚化合物。通过在110°C加热,3 b和3 c可以转变为最稳定的3 a。使用3 a制备含IDTO的共轭聚合物PIDTOTT通过Stille偶联反应作为共聚单体,它具有窄的带隙和低的能级。在有机场效应晶体管(OFET)中,PIDTOTT表现出单极n型半导体特性,其电子迁移率出乎意料地高(高达0.14 cm 2 V -1 s -1),尽管其链堆积无序。