1-diethylamino-2-methyl-butan-2-ol | 854464-97-4

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-diethylamino-2-methyl-butan-2-ol
• 英文别名: 1-Diaethylamino-2-methyl-butan-2-ol；Diaethyl-(2-hydroxy-2-methyl-butyl)-amin；Methyl-diaethylaminomethyl-aethyl-carbinol；Diaethyl-(β-oxy-β-methyl-butyl)-amin；1-(Diethylamino)-2-methylbutan-2-ol；1-(diethylamino)-2-methylbutan-2-ol
• CAS: 854464-97-4
• 化学式: C₉H₂₁NO
• 分子量: 159.272
• InChiKey: SMRUXTCHHJALRQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.5
• 重原子数：
  11
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  23.5
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  1-diethylamino-2-methyl-butan-2-ol 在 氯化亚砜 、 氯仿 作用下， 生成 diethyl-(2-chloro-2-methyl-butyl)-amine
  参考文献：
  名称：

  Takahashi; Senda, Yakugaku Zasshi/Journal of the Pharmaceutical Society of Japan, 1949, vol. 69, p. 498

  摘要：

  DOI：
• 作为产物：
  描述：

  2-甲基-丁烯 在 水 、 溴 、 苯 作用下， 生成 1-diethylamino-2-methyl-butan-2-ol
  参考文献：
  名称：

  Fourneau; Puyal, Bulletin de la Societe Chimique de France, 1922, vol. <4>31, p. 427

  摘要：

  DOI：

文献信息

• RUTHENIUM COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS FOR THIN FILM FORMATION
  申请人：ADEKA CORPORATION

  公开号：US20160272664A1

  公开（公告）日：2016-09-22

  Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R 1 , R 2 , and R 3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R 1 and R 2 is 3 to 10. In formula (I), R 1 and R 2 are each preferably ethyl or isopropyl.

  本发明涉及一种钌化合物，可用作化学气相生长（特别是ALD）的前体。该化合物与反应气体具有良好的反应性，具有高蒸气压和低熔点。该化合物由通式（I）表示，其中R1，R2和R3各自独立地表示具有1至5个碳原子的直链或支链烷基，前提是R1和R2的碳原子总数为3至10。在式（I）中，R1和R2最好分别为乙基或异丙基。
• COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
  申请人：Adeka Corporation

  公开号：EP3144293A1

  公开（公告）日：2017-03-22

  This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

  本发明提供了由下式（I）表示的铜化合物。在通式（I）中，R1 至 R3 独立地代表碳原子数为 1 至 5 的直链或支链烷基；如果 R1 和 R2 是甲基，R3 代表碳原子数为 2 至 5 的直链或支链烷基；如果 R1 是甲基，R2 是乙基，R3 代表甲基或碳原子数为 3 至 5 的直链或支链烷基。用于形成本发明薄膜的起始材料包括通式（I）所代表的铜化合物。本发明可提供一种熔点低、能以液态输送、蒸汽压高且易汽化的铜化合物，以及一种使用这种铜化合物形成薄膜的起始材料。
• COBALT COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, AND METHOD FOR PRODUCING THIN FILM
  申请人：Adeka Corporation

  公开号：EP3144313A1

  公开（公告）日：2017-03-22

  The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

  本发明的钴化合物由以下通式 (I) 表示。在通式（I）中，R1 至 R3 分别代表具有 1 至 5 个碳原子的直链或支链烷基。此外，本发明的成膜原料还含有通式（I）表示的钴化合物。根据本发明，可以提供一种钴化合物，该钴化合物因熔点低而可以液体形式运输，因蒸汽压高而可以在低温下分解并容易汽化；还可以提供一种使用该钴化合物的成膜原料。
• Ruthenium compound, material for thin film formation, and process for thin film formation
  申请人：ADEKA CORPORATION

  公开号：US10167304B2

  公开（公告）日：2019-01-01

  Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.

  本发明公开了一种可用作化学气相生长（尤其是 ALD）前驱体的钌化合物。该化合物与活性气体的反应性好，蒸汽压高，熔点低。该化合物由通式 (I) 表示，其中 R1、R2 和 R3 各自独立地代表具有 1 至 5 个碳原子的直链或支链烷基，但 R1 和 R2 的碳原子总数为 3 至 10。在式 (I) 中，R1 和 R2 各自最好是乙基或异丙基。
• Einhorn; Fiedler; Ladisch, Justus Liebigs Annalen der Chemie, 1909, vol. 371, p. 152
  作者：Einhorn、Fiedler、Ladisch、Uhlfelder

  DOI：——

  日期：——