The present invention relates to monomers for preparing photoresist polymer resins which can be used in a photolithography process employing a deep ultraviolet light source, and the preparation of the same. Preferred monomers are represented by following Chemical Formula 1:
wherein, X represents CH2, CH2CH2, or oxygen;
R1 represents hydrogen, C1-C5 alkyl, or R′OH;
R2 represents hydrogen; —OH, C1-C5 alkoxy, or —OR′—OH;
R′ represents:
and,
m is an integer from 1-5, n is 1 or 2 and p is 0 or 1.
本发明涉及用于制备可用于采用深紫外光源的光刻工艺中的光刻聚合物
树脂的单体,以及其制备方法。优选单体由以下
化学式1表示:
<化学式1>
其中,X代表
CH2、 或氧;
R1代表氢、C1-C5烷基或R′OH;
R2代表氢、—OH、C1-C5烷氧基或—OR′—OH;
R′代表:
并且,
m为1-5的整数,n为1或2,p为0或1。