1-二甲基氨基-2-甲基丁烷-2-醇 | 74347-10-7

• 分子结构分类: 有机化合物 - 有机氧化合物
• 中文名称: 1-二甲基氨基-2-甲基丁烷-2-醇
• 中文别名: 1-二甲氨基-2-甲基丁烷-2-醇
• 英文名称: dimethylamino-2-methyl-2-butanol
• 英文别名: 1-dimethylamino-2-methylbutane-2-ol；dmambH；1-Dimethylamino-2-methyl-butanol-(2)；1-dimethylamino-2-methyl-butan-2-ol；1-Dimethylamino-2-methylbutan-2-ol；1-(dimethylamino)-2-methylbutan-2-ol
• CAS: 74347-10-7
• 化学式: C₇H₁₇NO
• 分子量: 131.218
• InChiKey: AGXSAKYCANEZGX-UHFFFAOYSA-N

物化性质

• 沸点：
  144-146 °C
• 密度：
  0.881±0.06 g/cm3(Predicted)
• 溶解度：
  溶于二氯甲烷

计算性质

• 辛醇/水分配系数(LogP)：
  0.7
• 重原子数：
  9
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  23.5
• 氢给体数：
  1
• 氢受体数：
  2

安全信息

• 海关编码：
  2922199090

反应信息

• 作为反应物：
  描述：

  1-二甲基氨基-2-甲基丁烷-2-醇 生成 阿米卡因
  参考文献：
  名称：

  DE169746

  摘要：

  公开号：
• 作为产物：
  描述：

  2-甲基-丁烯 在 水 、 溴 、 苯 作用下， 生成 1-二甲基氨基-2-甲基丁烷-2-醇
  参考文献：
  名称：

  Fourneau; Puyal, Bulletin de la Societe Chimique de France, 1922, vol. <4>31, p. 427

  摘要：

  DOI：

文献信息

• 전이금속 함유 전구체, 이의 제조방법 및 이의 용도
  申请人：KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY 한국화학연구원(319980077651)

  公开号：KR20170037102A

  公开（公告）日：2017-04-04

  본 발명은 전이금속 함유 전구체, 이의 제조방법 및 이를 이용하여 박막을 제조하는 방법에 관한 것으로, 본 발명에 따른 전이금속 함유 전구체는 열적 안정성과 휘발성이 개선되어 낮은 온도에서도 쉽게 양질의 코발트 산화물 또는 망간 산화물을 포함하는 박막의 제조가 가능하다.

  本发明涉及含有过渡金属的前体、其制备方法以及利用它制备薄膜的方法，根据本发明，含有过渡金属的前体具有改善热稳定性和挥发性，使得在低温下也能轻松制备包含优质钴氧化物或锰氧化物的薄膜。
• Volatile copper aminoalkoxide complex and deposition of copper thin film using same
  申请人：Korea Research Institute of Chemical Technology

  公开号：US06982341B1

  公开（公告）日：2006-01-03

  A volatile copper aminoalkoxide complex of formula (I) can form a copper thin film having an improved quality by metal organic chemical vapor deposition (MOCVD): wherein, R1, R2, R3 and R4 are each independently C1-4 alkyl optionally carrying one or more fluorine substituents; and m is an integer in the range of 1 to 3.

  一种具有改进质量的铜氨基烷氧化物复合物（I）可通过金属有机化学气相沉积（MOCVD）形成铜薄膜：其中，R1、R2、R3和R4分别独立地是C1-4烷基，可选择地携带一个或多个氟取代基；m是在1到3范围内的整数。
• NOVEL TIN AMINO-ALKOXIDE COMPLEXES AND PROCESS FOR PREPARING THEREOF
  申请人：KIM Chang Gyoun

  公开号：US20090275770A1

  公开（公告）日：2009-11-05

  The present invention relates to novel tin amino-alkoxide complexes and a method for preparing the same, precisely novel tin amino-alkoxide complexes represented by formula 1 and useful as a precursor for tin and tin oxide thin films and a precursor for the production of nano-sized tin and tin oxide particles and a method for preparing the same. In formula 1, A is linear or branched (C2-C10) alkylene substituted or not substituted with halogen; R 1 and R 2 are independently linear or branched (C1-C7) alkyl substituted or not substituted with halogen. Sn[O-A-NR 1 R 2 ] 2 [Formula 1]

  本发明涉及一种新型的锡氨基醇酸盐络合物及其制备方法，准确地说是由式子1所表示的新型锡氨基醇酸盐络合物，可作为锡和锡氧化物薄膜的前体，以及纳米级锡和锡氧化物颗粒的生产前体，并提供了一种制备方法。在式1中，A是线性或支链(C2-C10)烷基，取代或未取代卤素；R1和R2分别是线性或支链(C1-C7)烷基，取代或未取代卤素。Sn[O-A-NR1R2]2[式1]
• RUTHENIUM COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS FOR THIN FILM FORMATION
  申请人：ADEKA CORPORATION

  公开号：US20160272664A1

  公开（公告）日：2016-09-22

  Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R 1 , R 2 , and R 3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R 1 and R 2 is 3 to 10. In formula (I), R 1 and R 2 are each preferably ethyl or isopropyl.

  本发明涉及一种钌化合物，可用作化学气相生长（特别是ALD）的前体。该化合物与反应气体具有良好的反应性，具有高蒸气压和低熔点。该化合物由通式（I）表示，其中R1，R2和R3各自独立地表示具有1至5个碳原子的直链或支链烷基，前提是R1和R2的碳原子总数为3至10。在式（I）中，R1和R2最好分别为乙基或异丙基。
• COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
  申请人：Adeka Corporation

  公开号：EP3144293A1

  公开（公告）日：2017-03-22

  This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

  本发明提供了由下式（I）表示的铜化合物。在通式（I）中，R1 至 R3 独立地代表碳原子数为 1 至 5 的直链或支链烷基；如果 R1 和 R2 是甲基，R3 代表碳原子数为 2 至 5 的直链或支链烷基；如果 R1 是甲基，R2 是乙基，R3 代表甲基或碳原子数为 3 至 5 的直链或支链烷基。用于形成本发明薄膜的起始材料包括通式（I）所代表的铜化合物。本发明可提供一种熔点低、能以液态输送、蒸汽压高且易汽化的铜化合物，以及一种使用这种铜化合物形成薄膜的起始材料。