Gallium and Indium β‐Diketonate Complexes: AACVD of [In(thd)
<sub>3</sub>
] and the Attempted Synthesis of Gallium and Indium Bis(β‐diketonates)
作者:David Pugh、Leanne G. Bloor、Sanjayan Sathasivam、Ivan P. Parkin、Claire J. Carmalt
DOI:10.1002/ejic.201001235
日期:2011.4
bdk = beta-diketonate; X = chloride, hydride, methyl) was attempted such that the solubility could be improved by tuning the ligands surrounding the metal centre. Reaction of stoichiometric amounts of beta-diketones [Hthd and 2,4-pentanedione (acetylacetone, Hacac)] with Lewis base-stabilized adducts of GaH3 resulted only in the isolation of the homoleptic gallium tris(beta-diketonate) compounds [Ga(bdk)(3)]
[In(thd)(3)](thd = 2,2,6,6-tetramethylheptane-3,5-dionate)在 CH2Cl2 中的悬浮液在 450 摄氏度的气溶胶辅助化学气相沉积 (AACVD) 中得到薄结晶氧化铟薄膜。通过扫描电子显微镜 (SEM)、掠射角 X 射线衍射 (XRD) 和 X 射线能量色散分析 (EDX) 对薄膜进行分析。[In(thd)(3)] 的溶解度差阻碍了生长更厚薄膜的努力,因此合成 [M(bdk)(2)X] 型杂配化合物 (M = Ga, In; bdk = β-二酮;X = 氯化物、氢化物、甲基),这样可以通过调整金属中心周围的配体来提高溶解度。化学计量的 β-二酮 [Hthd 和 2,4-戊二酮(乙酰丙酮,Hacac)] 与 GaH3 的路易斯碱稳定加合物仅导致分离出均配镓三(β-二酮)化合物 [Ga(bdk)(3)],而不是预期的杂配镓双(β-二酮)氢化物