Composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom
申请人:——
公开号:US20030083392A1
公开(公告)日:2003-05-01
A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a T
g
of greater than 300° C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.
合适的可交联基质前体和多孔剂经处理后可形成多孔交联基质,其 T
g
多孔基体材料的介电常数低于相应的无孔基体材料,因此多孔基体材料特别适用于各种电子应用,包括集成电路、多芯片模块和平板显示器件。
A COMPOSITION CONTAINING A CROSS-LINKABLE MATRIX PRECURSOR AND A PORAGEN, AND A POROUS MATRIX PREPARED THEREFROM