Disclosed is a chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 µm or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:
本发明公开了一种
化学放大正放大物,它可以形成抗蚀剂图案,在透明度、光敏性和分辨率方面都有很大的提高,并且适用于 KrF 和 ArF 准分子激光,使亚微光刻工艺达到 0.2 微米或更小的精细度。该组合物基于式 I 的共聚物(以聚
苯乙烯还原平均分子量计,分子量范围为 3,000 至 50,000,分子量分布(Mw/Mn)为 1.0 至 2.0)和式 VI 的低分子量化合物: