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2-[(Chloromethoxy)methyl]bicyclo[2.2.1]heptane | 261716-95-4

中文名称
——
中文别名
——
英文名称
2-[(Chloromethoxy)methyl]bicyclo[2.2.1]heptane
英文别名
2-(chloromethoxymethyl)bicyclo[2.2.1]heptane
2-[(Chloromethoxy)methyl]bicyclo[2.2.1]heptane化学式
CAS
261716-95-4
化学式
C9H15ClO
mdl
——
分子量
174.67
InChiKey
MPOGYTIIEFLDNQ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.1
  • 重原子数:
    11
  • 可旋转键数:
    3
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    9.2
  • 氢给体数:
    0
  • 氢受体数:
    1

文献信息

  • Resist composition
    申请人:Kawaguchi Yasuhide
    公开号:US20050202345A1
    公开(公告)日:2005-09-15
    A resist composition which can easily form a resist pattern excellent in transparency for vacuum ultraviolet rays such as an F 2 excimer laser or the like and dry etching characteristics and further excellent in sensitivity, resolution, flatness, thermal resistance and the like, is provided. The resist composition, characterized by comprising (A) a fluorine-containing polymer having an acidic group blocked with a blocking group containing a cycloalkyl group, an organic group having one or more of cycloalkyl groups, a bicycloalkyl group or the like, (B) an acid generating compound capable of generating an acid by irradiation with a light, and (C) an organic solvent.
    提供了一种抗蚀性组合物,该组合物可以轻松形成透明度优异的抗真空紫外线(例如F2准分子激光器)或干法刻蚀特性,并且在灵敏度、分辨率、平整度、耐热性等方面也具有优异的抗蚀性图案。该抗蚀性组合物的特征在于包含(A)一种含有具有环烷基、一个或多个环烷基或双环烷基等有机基团的阻断基的酸性基团的含量高的聚合物,(B)一种能够通过光辐射产生酸的酸发生化合物,以及(C)一种有机溶剂。
  • Fluoropolymer
    申请人:Kawaguchi Yasuhide
    公开号:US20050209409A1
    公开(公告)日:2005-09-22
    To provide a fluoropolymer suitable for use as a base polymer for resist materials for excimer lasers having a wavelength of 250 nm or shorter. A fluoropolymer having a monomer unit formed by cyclopolymerization of a fluorinated diene compound represented by the following formula (3), CF 2 ═CFCF 2 —C(CF 3 )(R 5 )—CH 2 CH═CH 2 (3) wherein R 5 is either a hydroxyl group blocked by —CHR 7 —O—R 8 or an organic group having the hydroxyl group, and R 8 is a cyclic saturated hydrocarbon such as a cycloalkyl group which may have a substituent, or an organic group having the cyclic saturated hydrocarbon.
    提供一种适用于250nm或更短波长准分子激光光刻材料的基础聚合物聚合物。该聚合物具有由以下化学式(3)表示的化二化合物的环聚合物单体单元,CF2═CFCF2—C(CF3)(R5)— CH═CH2(3)其中,R5为通过—CHR7—O—R8阻断的羟基基团或具有羟基基团的有机基团,R8为环状饱和碳氢化合物,例如可能具有取代基团的环烷基团,或具有环状饱和碳氢化合物的有机基团。
  • Chemically amplified positive photoresist composition
    申请人:Korea Kumho Petrochemical Co. Ltd.
    公开号:EP0989458A2
    公开(公告)日:2000-03-29
    Disclosed is a chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 µm or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:
    本发明公开了一种化学放大正放大物,它可以形成抗蚀剂图案,在透明度、光敏性和分辨率方面都有很大的提高,并且适用于 KrF 和 ArF 准分子激光,使亚微光刻工艺达到 0.2 微米或更小的精细度。该组合物基于式 I 的共聚物(以聚苯乙烯还原平均分子量计,分子量范围为 3,000 至 50,000,分子量分布(Mw/Mn)为 1.0 至 2.0)和式 VI 的低分子量化合物:
  • Polymer for radiation-sensitive resist and resist composition containing the same
    申请人:Korea Kumho Petrochemical Co. Ltd.
    公开号:EP0994392A2
    公开(公告)日:2000-04-19
    There are disclosed a radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=1 and 0.4≤o≤0.5:
    本发明公开了一种辐射敏感聚合物和以该聚合物基础化学放大抗蚀剂组合物,通过调节基体聚合物羧酸接枝降冰片烯生物的含量和种类,可轻松控制其敏感性,并且具有优异的基底附着性和耐干蚀刻性,因此可通过使用 KrF 或 ArF 准分子激光形成透明度、光敏性和分辨率均有所提高的抗蚀剂图案。该聚合物由式 I 表示: 其中,X 是可酸解接枝降冰片烯生物,选自式 II 和 III 所组成的组;Y 是羧酸接枝降冰片烯生物,由式 IV 表示;l、m、n 和 o 各为不大于 0.5 的重复数,满足 l+m+n+o=1 和 0.4≤o≤0.5 的条件:
  • Resist polymer and chemical amplified resist composition containing the same
    申请人:Korea Kumho Petrochemical Co. Ltd.
    公开号:EP0989462A1
    公开(公告)日:2000-03-29
    Disclosed are a copolymer represented by the formula I and a chemical amplification resist containing the copolymer, which can be easily controlled in sensitivity by regulating the content and kind of the norbornene derivatives in the matrix polymers in addition to being superior in adherence to substrate and dry etch resistance: wherein, X is selected from the group consisting of the following general formulas II, III and IV; and, l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=1 and 0.4≤o≤0.5:
    本发明公开了一种由式 I 表示的共聚物和一种含有该共聚物的化学放大抗蚀剂,该抗蚀剂除了具有优异的基底附着性和耐干蚀刻性之外,还可以通过调节基体聚合物降冰片烯生物的含量和种类来轻松控制其灵敏度: 其中,X 选自以下通式 II、III 和 IV 所组成的组;l、m、n 和 o 各为不大于 0.5 的重复数,满足 l+m+n+o=1 和 0.4≤o≤0.5 的条件:
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