Synthesis and Physicochemical Properties of Dibenzo[2,3-<i>d</i>:2′,3′-<i>d</i>′]anthra[1,2-<i>b</i>:5,6-<i>b</i>′]dithiophene (DBADT) and Its Derivatives: Effect of Substituents on Their Molecular Orientation and Transistor Properties
作者:Keita Hyodo、Shuhei Nishinaga、Yuta Sawanaka、Takumi Ishida、Hiroki Mori、Yasushi Nishihara
DOI:10.1021/acs.joc.8b02557
日期:2019.1.18
mobility, as high as 0.66 cm2 V–1 s–1. The surface morphology and molecular orientation in thin films were also investigated using atomic force microscopy (AFM) and two-dimensional grazing incidence X-ray diffraction (2D-GIXD). It was found that the substituents and their positions affect the molecular orbitals, molecular orientation, and morphology of the thin films, producing different FET performance
我们合成了二苯并[2,3- d:2',3'- d ']蒽[1,2- b:5,6- b ']二噻吩(DBADT)和几种在不同位置带有烷基和苯基的衍生物。研究了合成化合物的光学和电化学性质。所有制造的OFET器件在环境条件下均表现出典型的p型行为,基于二苯基取代的类似物的OFET器件显示出优异的迁移率,高达0.66 cm 2 V –1 s –1。还使用原子力显微镜(AFM)和二维掠入射X射线衍射(2D-GIXD)研究了薄膜的表面形态和分子取向。发现取代基及其位置影响薄膜的分子轨道,分子取向和形态,从而产生不同的FET性能。