RESIST UNDERLAYER FILM-FORMING COMPOSITION, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION
申请人:Nakajima Makoto
公开号:US20100210765A1
公开(公告)日:2010-08-19
There is provided a composition for forming a resist underlayer film that the adhesion with a resist applied on the resist underlayer film is enhanced and the collapse of a resist pattern is suppressed. A resist underlayer film-forming composition for lithography comprising: a polymer having silicon atoms in the backbone; a compound of a polycyclic structure; and an organic solvent, wherein the compound of a polycyclic structure has at least two carboxyl groups as substituents; the two carboxyl groups are individually bonded to two carbon atoms adjacent to each other forming the polycyclic structure; and the two carboxyl groups both have an endo configuration or an exo configuration, or have a cis configuration.
提供了一种用于形成抗蚀底层膜的组合物,其增强了与施加在抗蚀底层膜上的抗蚀剂的粘附性并抑制了抗蚀图案的崩溃。一种用于光刻的抗蚀底层膜形成组合物,包括:具有硅原子的聚合物骨架;多环结构的化合物;和有机溶剂,其中,多环结构的化合物具有至少两个羧基作为取代基;这两个羧基分别与相邻的两个碳原子形成多环结构的键合;这两个羧基都具有内向构型或外向构型,或具有顺式构型。