(7,7-Dimethyl-2-oxo-1-bicyclo[2.2.1]heptanyl)methanesulfonate;triethylazanium | 67019-84-5

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: (7,7-Dimethyl-2-oxo-1-bicyclo[2.2.1]heptanyl)methanesulfonate;triethylazanium
• 英文别名: (7,7-dimethyl-2-oxo-1-bicyclo[2.2.1]heptanyl)methanesulfonate;triethylazanium
• CAS: 67019-84-5
• 化学式: C16H31NO4S
• 分子量: 333.5
• InChiKey: UIMAOHVEKLXJDO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.62
• 重原子数：
  22
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.94
• 拓扑面积：
  83.1
• 氢给体数：
  1
• 氢受体数：
  5

文献信息

• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20170073288A1

  公开（公告）日：2017-03-16

  The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

  根据本发明，该化合物由特定的公式表示。根据本发明，该化合物具有特定公式的结构，因此可应用于湿法工艺，具有优异的耐热性和耐蚀性。此外，根据本发明，该化合物具有特定结构，因此具有高耐热性、相对较高的碳浓度、相对较低的氧浓度以及高溶剂溶解性。因此，根据本发明的化合物可用于形成在高温烘烤时降解受抑制且在氧等离子体蚀刻中具有优异耐蚀性的底层膜。此外，该化合物在与光阻层的粘附性方面也表现出色，因此可形成优异的光阻图案。
• POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：NISHI Tsunehiro

  公开号：US20100062374A1

  公开（公告）日：2010-03-11

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.

  一种正性光刻胶组合物包括（A）在酸的作用下在碱性显影剂中变得可溶的树脂组分和（B）酸发生剂。树脂（A）是一种聚合物，包含由式（1）表示的非离去羟基的重复单元，其中R1为H、甲基或三氟甲基，X为单键或亚甲基，m为1或2，并且羟基连接到次级碳原子。当通过光刻工艺处理时，该组合物在分辨率方面得到改善。
• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohsawa Youichi

  公开号：US20090246694A1

  公开（公告）日：2009-10-01

  Photoacid generators generate sulfonic acids of formula ( 1 a) upon exposure to high-energy radiation. ROC(═O)R 1 —COOCH 2 CF 2 SO 3 − H + (1a) RO is OH or C 1 -C 20 organoxy, R 1 is a divalent C 1 -C 20 aliphatic group or forms a cyclic structure with RO. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。 ROC(═O)R1—COOCH2CF2SO3−H+(1a) RO为OH或C1-C20有机氧基，R1为二价的C1-C20脂肪族基团或与RO形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。
• POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohashi Masaki

  公开号：US20100055608A1

  公开（公告）日：2010-03-04

  A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R 1 is H, F, methyl or trifluoromethyl, R 2 , R 3 and R 4 are C 1 -C 10 alkyl, alkenyl or oxoalkyl or C 6 -C 18 aryl, aralkyl or aryloxoalkyl, or two of R 2 , R 3 and R 4 may bond together to form a ring with S, A is a C 1 -C 10 organic group, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

  提供具有式（1）的可聚合含阴离子的亚砜盐，其中R1为H、F、甲基或三氟甲基，R2、R3和R4为C1-C10烷基、烯基或氧代烷基或C6-C18芳基、芳基烷基或芳氧代烷基，或R2、R3和R4中的两个可以结合在一起形成与S的环，A为C1-C10有机基团，n为0或1。该亚砜盐在暴露于高能辐射时生成非常强的磺酸。还提供了包含从该亚砜盐衍生的聚合物的抗蚀组合物。
• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20090061358A1

  公开（公告）日：2009-03-05

  Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R 1 —COOCH(CF 3 )CF 2 SO 3 + H + (1a) R 1 —O—COOCH(CF 3 )CF 2 SO 3 − H + (1c) R 1 is a C 20 -C 50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）或（1c）的磺酸。R1—COOCH(CF3)CF2SO3+H+(1a)R1—O—COOCH(CF3)CF2SO3−H+(1c)R1是具有类固醇结构的C20-C50烃基。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。