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(chloromethyl) (4-oxo-2-adamantyl) ether

中文名称
——
中文别名
——
英文名称
(chloromethyl) (4-oxo-2-adamantyl) ether
英文别名
4-oxo-2-adamantyl chloromethyl ether;4-(chloromethoxy)adamantan-2-one
(chloromethyl) (4-oxo-2-adamantyl) ether化学式
CAS
——
化学式
C11H15ClO2
mdl
——
分子量
214.692
InChiKey
BEPPHPDUZQZCIM-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.8
  • 重原子数:
    14
  • 可旋转键数:
    2
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.91
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    2

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    (chloromethyl) (4-oxo-2-adamantyl) ether9-methacryloyltetracyclododecane-4-carboxylic acid三乙胺 作用下, 以 四氢呋喃 为溶剂, 反应 12.0h, 生成 (4-Oxo-2-adamantyl)oxymethyl 10-(2-methylprop-2-enoyloxy)tetracyclo[6.2.1.13,6.02,7]dodecane-4-carboxylate
    参考文献:
    名称:
    [EN] COMPOUND, POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
    [FR] COMPOSÉ; COMPOSÉ POLYMÈRE; COMPOSITION RÉSISTANTE POSITIVE ET PROCÉDÉ DE FORMATION D'UN MODÈLE RÉSISTANT
    摘要:
    本发明涉及一种具有优异分辨率的正型光刻胶组合物,即使使用生成弱酸的酸发生剂,也能形成良好的光刻胶图案。该正型光刻胶组合物包含具有由下式(II)表示的构成单元(a1)的聚合物化合物和在光照下生成酸的酸发生剂组分(B)。[在式中,R1表示氢原子或低碳基;R3表示具有1-15个碳原子的烷基或脂环族基,并且可以具有从醚键,羟基,羰基,酯基和氨基组成的一种或多种取代基;n2表示0或1-3的整数。]
    公开号:
    WO2005123655A1
  • 作为产物:
    描述:
    聚合甲醛4-Hydroxyadamantan-2-on盐酸 、 magnesium sulfate 作用下, 以 二氯甲烷 为溶剂, 反应 3.0h, 以85.2%的产率得到(chloromethyl) (4-oxo-2-adamantyl) ether
    参考文献:
    名称:
    EP1577285
    摘要:
    公开号:
  • 作为试剂:
    描述:
    聚合甲醛4-Hydroxyadamantan-2-on盐酸(chloromethyl) (4-oxo-2-adamantyl) ether 作用下, 反应 12.0h, 以to obtain 4-oxo-2-adamantyl chloromethyl ether (compound 1)的产率得到(chloromethyl) (4-oxo-2-adamantyl) ether
    参考文献:
    名称:
    Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method
    摘要:
    本发明提供了一种聚合物化合物,该化合物可以构成一种光刻胶组合物,该组合物能够具有优异的分辨率,形成具有良好矩形度的精细图案,即使从酸发生器生成的酸的强度较弱,也能获得良好的抗性特性,并具有良好的灵敏度;包括该聚合物化合物的光刻胶组合物;以及使用该光刻胶组合物的抗性图案形成方法。该光刻胶组合物和抗性图案形成方法使用包括碱溶性基团(i)的聚合物化合物,其中碱溶性基团(i)是从醇羟基、羧基或酚羟基中至少选择一个取代基团,并且该取代基团由一种酸解离、抑制溶解的基团(ii)保护,该基团由通式(1)表示:—CH2—OCH2nR1(1)(其中R1表示不含有超过20个碳原子的环烷基团,可能含有氧原子、氮原子、硫原子或卤素原子,n表示0或1到5的整数)。
    公开号:
    US20080166655A1
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文献信息

  • Adamantane derivative and process for producing the same
    申请人:Tanaka Shinji
    公开号:US20060149073A1
    公开(公告)日:2006-07-06
    Provided is an adamantane derivative represented by Formula (I) or (II): wherein X represents a halogen atom; Y represents an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, a halogen atom or a hetero atom-containing group; R 1 to R 4 represent independently hydrogen, a halogen atom, an alkyl group having 1 to 10 carbon atoms or a halogenated alkyl group having 1 to 10 carbon atoms; m represents an integer of 0 to 15, and n represents an integer of 0 to 10; and excluded is a case where in Formula (I), m and n are 0 at the same time and R 3 and R 4 are a hydrogen atom at the same time. Capable of being provided is a novel adamantane derivative which is useful as a modifying agent for a resin for a photoresist and a dry etching resistance-improving agent in the photolithography field, agricultural and medical intermediates and other various industrial products.
    提供的是由公式(I)或(II)表示的金刚烷衍生物:其中X代表卤素原子;Y代表具有1至10个碳原子的烷基,具有1至10个碳原子的卤代烷基,卤素原子或含杂原子的基团;R1至R4独立地代表氢、卤素原子、具有1至10个碳原子的烷基或具有1至10个碳原子的卤代烷基;m表示0至15的整数,n表示0至10的整数;在公式(I)中,m和n同时为0且R3和R4同时为氢原子的情况被排除。能够提供一种新的金刚烷衍生物,其可用作光刻胶树脂的改性剂和光刻工艺中的干法蚀刻抗性改进剂,以及农业和医学中间体和其他各种工业产品。
  • Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method
    申请人:Tokyo Ohka Kogyo Co., Ltd.
    公开号:US07723007B2
    公开(公告)日:2010-05-25
    The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—OCH2nR1  (1) (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5).
    本发明提供一种聚合物化合物,可构成一种光阻组合物,该光阻组合物具有优异的分辨率,形成良好的矩形细图案,即使酸发生器产生的酸强度较弱,也能获得良好的抗阻特性,并具有良好的灵敏度。光阻组合物包括该聚合物化合物;以及使用该光阻组合物的抗阻图案形成方法。光阻组合物和抗阻图案形成方法使用该聚合物化合物,包括碱溶性基团(i),其中碱溶性基团(i)是选择自醇基羟基、羧基或酚基的至少一种取代基团,并且所述取代基团由一种酸解离、溶解抑制基团(ii)保护,该基团由通式(1)表示:—CH2—OCH2nR1  (1)(其中R1表示不含有超过20个碳原子的环脂肪基团,可能含有氧原子、氮原子、硫原子或卤素原子,n表示0或1至5的整数)。
  • POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN
    申请人:TOKYO OHKA KOGYO CO., LTD.
    公开号:EP1717261A1
    公开(公告)日:2006-11-02
    The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).
    本发明提供了一种聚合物化合物,它可以构成一种光刻胶组合物,该组合物能够具有极佳的分辨率,形成具有良好矩形度的精细图案,即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性,并且具有良好的灵敏度;一种包括该聚合物化合物的光刻胶组合物;以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物,其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基,取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护: (其中 R1 代表含不超过 20 个碳原子的环脂族基团,可包含氧原子、氮原子、硫原子或卤素原子,n 代表 0 或 1 至 5 的整数)。
  • Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
    申请人:Tokyo Ohka Kogyo Co., Ltd.
    公开号:EP2433972A1
    公开(公告)日:2012-03-28
    The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).
    本发明提供了一种聚合物化合物,它可以构成一种光刻胶组合物,该组合物能够具有极佳的分辨率,形成具有良好矩形度的精细图案,即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性,并且具有良好的灵敏度;一种包括该聚合物化合物的光刻胶组合物;以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物,其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基,取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护: (其中 R1 代表含不超过 20 个碳原子的环脂族基团,可包含氧原子、氮原子、硫原子或卤素原子,n 代表 0 或 1 至 5 的整数)。
  • Polymer Compound, Positive Resist Composition and Process for Forming Resist Pattern
    申请人:Kinoshita Yohei
    公开号:US20080096126A1
    公开(公告)日:2008-04-24
    The positive resist composition of the present invention is a polymer compound comprising at least one constituent unit (a1) selected from the group consisting of constituent units represented by the following general formulas (1) and (1)′, a constituent unit (a2) derived from an (α-lower alkyl)acrylate ester having a lactone-containing monocycle or a polycyclic group, and a constituent unit (a3) which is a constituent unit other than the constituent unit (a1) and the constituent unit (a2) and is derived from an (α-lower alkyl)acrylate ester which has an aliphatic cyclic group-containing non-acid dissociable dissolution inhibiting group and does not have a polar group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group having 20 or less carbon atoms, or a fluorinated lower alkyl group having 20 or less carbon atoms, R 1 represents at most 20-membered cyclic group which may have a substituent, n represents 0 or an integer of 1 to 5, and m represents 0 or 1.
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