乙酰胆碱高氯酸盐 | 927-86-6

• 物质功能分类: 有机原料 - 羧酸类化合物及衍生物
• 分子结构分类: 有机化合物 - 有机氮化合物
• 中文名称: 乙酰胆碱高氯酸盐
• 中文别名: 高氯酸乙酰胆碱
• 英文名称: Acetylcholine perchlorate
• 英文别名: 2-acetyloxyethyl(trimethyl)azanium;perchlorate
• CAS: 927-86-6
• 化学式: C₇H₁₆NO₂*ClO₄
• 分子量: 245.66
• InChiKey: SHIQLFRCVFUYEK-UHFFFAOYSA-M

物化性质

• 熔点：
  115 °C
• 溶解度：
  >36.8 [ug/mL]
• 稳定性/保质期：
  在常温常压下，该物质保持稳定。

计算性质

• 辛醇/水分配系数(LogP)：
  -4.5
• 重原子数：
  15
• 可旋转键数：
  4
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.86
• 拓扑面积：
  101
• 氢给体数：
  0
• 氢受体数：
  6

安全信息

• 危险等级：
  5.1
• 危险品标志：
  Xi
• 安全说明：
  S26,S36
• 危险类别码：
  R36/37/38
• WGK Germany：
  3
• 海关编码：
  2923900090

制备方法与用途

用途

这是一种在胆碱能突触处产生的内源性神经递质，能够放大肌膜的动作电位，进而引发肌肉收缩。

反应信息

• 作为反应物：
  描述：

  乙酰胆碱高氯酸盐 在 水 、 sodium chloride 、 acetylcholinesterase 作用下， 生成 choline perchlorate 、 溶剂黄146
  参考文献：
  名称：

  Transition-state properties and rate-limiting processes in the acetylation of acetylcholinesterase by natural and unnatural substrates

  摘要：

  DOI：

  10.1021/ja00526a052

文献信息

• 1-substituted hydroxyiminomethyl-pyridinium salts, a process for the production of said compounds, compositions with an activity against organophosphate poisonings, and a process for the preparation of such compositions
  申请人：Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO

  公开号：EP0023378A1

  公开（公告）日：1981-02-04

  Hydroxyiminomethyl-pyridinium salts of the formula: wherein R, is a substituted or unsubstituted (hetero) aryl group or a corresponding dihydro group, R2 is a hydrogen, an alkyl or aryl group, R, is hydrogen or an alkyl group and Z- is an anion suited for pharmacological purposes, pharmacological composition containing said compounds and a process for the preparation of said compounds by reacting a pyridine carboxaldoxime with a (hetero) arylhalide. The compounds show a good activity against nerve gases and are suited for prophylaxis too.

  式中 R，是取代或未取代的（杂）芳基或相应的二氢基团；R2 是氢、烷基或芳基；R，是氢或烷基；Z- 是适用于药理学目的的阴离子；含有上述化合物的药理组合物；以及通过吡啶羧醛肟与（杂）芳基卤化物反应制备上述化合物的工艺。 这些化合物对神经毒气具有良好的活性，也适用于预防。
• AROMATIC POLYESTER
  申请人：Muroran Institute of Technology

  公开号：EP2479203A1

  公开（公告）日：2012-07-25

  The present invention provides an aromatic polyester which is substantially free from the occurrence of coloration and retains significantly high transparency even after being thermally processed at high temperature and which has high flowability. The aromatic polyester contains a polyhydric phenol residue and a residue of any one of aromatic polycarboxylic acid, halide thereof, and anhydride thereof, and terminals of the aromatic polyester have a structure represented by the formula -C(O)-R. The aromatic polyester has an end-capping rate of 90% or higher and a weight average molecular weight (Mw) ranging from 3,000 to 1,000,000.

  本发明提供了一种芳香族聚酯，该聚酯基本上不会发生着色，即使在高温热加工后仍能保持明显的高透明度，并且具有高流动性。芳香族聚酯含有多羟基苯酚残留物和芳香族多羧酸、其卤化物和其酸酐中任意一种的残留物，芳香族聚酯的端基具有式 -C(O)-R 所代表的结构。芳香族聚酯的端盖率为 90% 或更高，重量平均分子量（Mw）为 3,000 至 1,000,000 之间。
• SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO TUNGSTEN-CONTAINING MATERIALS, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：EP3193358A1

  公开（公告）日：2017-07-19

  According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

  根据本发明，可以提供一种清洗液，用于去除具有低介电常数膜（低 k 膜）和含 10 个原子 % 或更多钨的材料的半导体元件表面上的光致抗蚀剂，其中清洗液含有 0.001-5 质量 % 的碱土金属化合物、0.1-30 质量 % 的无机碱和/或有机碱以及水。
• ALKALINE EARTH METAL-CONTAINING CLEANING SOLUTION FOR CLEANING SEMICONDUCTOR ELEMENT, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：EP3220408A1

  公开（公告）日：2017-09-20

  According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue and photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from between a material that contains 10 atom % or more of titanium and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains: 0.002-50 mass % of at least one type of oxidizing agent selected from among a peroxide, perchloric acid, and a perchlorate salt; 0.000001-5 mass % of an alkaline earth metal compound; and water.

  根据本发明，可以提供一种清洗液，用于清除具有低介电常数膜（低 k 膜）的半导体元件表面上的干蚀刻残留物和光致抗蚀剂，该半导体元件表面上的至少一种材料选自含有 10 个原子%或更多钛的材料和含有 10 个原子%或更多钨的材料，其中，清洗液含有0.002-50 质量％的至少一种氧化剂，选自过氧化物、高氯酸和高氯酸盐；0.000001-5 质量％的碱土金属化合物；以及水。
• Alkaline earth metal-containing cleaning solution for cleaning semiconductor element, and method for cleaning semiconductor element using same
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：US10377978B2

  公开（公告）日：2019-08-13

  According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue and photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and at least one material selected from between a material that contains 10 atom % or more of titanium and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains: 0.002-50 mass % of at least one type of oxidizing agent selected from among a peroxide, perchloric acid, and a perchlorate salt; 0.000001-5 mass % of an alkaline earth metal compound; and water.

  根据本发明，可以提供一种清洗液，用于清除具有低介电常数膜（低 k 膜）的半导体元件表面上的干蚀刻残留物和光致抗蚀剂，该半导体元件表面上的至少一种材料选自含有 10 个原子%或更多钛的材料和含有 10 个原子%或更多钨的材料，其中，清洗液含有0.002-50 质量％的至少一种氧化剂，选自过氧化物、高氯酸和高氯酸盐；0.000001-5 质量％的碱土金属化合物；以及水。

表征谱图