MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD
申请人:Fujitsu Limited
公开号:EP2138897A1
公开(公告)日:2009-12-30
An object of the invention is to provide a material for forming a conductive antireflection film, which excels in an antistatic effect as well as suppressing a reflection of ultraviolet ray, is highly sensitive, and is capable of efficiently forming a fine resist pattern, wiring pattern, or the like at high resolution and low cast with a simple process without omission or dislocation of the pattern, by preventing accumulation of charges, even when an electron beam is used as exposure light. The material for forming a conductive antireflection film of the invention contains a base resin having conductivity, a crosslinking agent, a thermal acid generator, and a solvent.
本发明的目的是提供一种用于形成导电减反射膜的材料,该材料具有优异的抗静电效果和抑制紫外线反射的效果,灵敏度高,即使在使用电子束作为曝光光的情况下,也能通过防止电荷积累,以高分辨率和低投射率有效地形成精细抗蚀图案、布线图案或类似图案,且工艺简单,图案无遗漏或错位。本发明用于形成导电减反射膜的材料包含具有导电性的基树脂、交联剂、热酸发生剂和溶剂。