申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2476713A1
公开(公告)日:2012-07-18
There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
本发明公开了一种抗蚀剂底层薄膜组合物,其中该组合物含有至少由以下通式(1-1)和/或(1-2)表示的一种或多种化合物和以下通式(2-1)和/或(2-2)表示的一种或多种化合物和/或其等效体缩合而得的聚合物。可以提供一种底层膜组合物,特别是用于三层抗蚀工艺的底层膜组合物,该组合物可以形成反射率降低的底层膜(即作为抗反射膜具有最佳 n 值和 k 值的底层膜)、填充性能优异、图案抗弯曲性能高、蚀刻后尤其是在厚度小于 60 nm 的高纵横向线上不会出现掉线或晃动的底层膜,以及使用该底层膜组合物的图案化工艺。