Thermolyses of pentacoordinate 1,2-oxasiletanides with or without a neopentyl group at the 3-position in the presence of a proton source afforded the corresponding olefin and/or alcohol, indicating that they are the intermediates of both the Peterson reaction and homo-Brook rearrangement which are two possible modes in the reaction of β-hydroxyalkylsilanes with bases.
Fluorine-Containing Sulfonic Acid Salt, Fluorine-Containing Sulfonic Acid Salt Resin, Resist Composition, and Pattern Forming Method Using Same
申请人:Central Glass Company, Limited
公开号:US20150198879A1
公开(公告)日:2015-07-16
Disclosed is a fluorine-containing sulfonic acid salt resin having a repeating unit represented by the following general formula (3). In the formula, each A independently represents a hydrogen atom, a fluorine atom or a trifluoromethyl group, and n represents an integer of 1-10. W represents a bivalent linking group, R
01
represents a hydrogen atom or a monovalent organic group, and M
+
represents a monovalent cation. A resist composition containing this resin is further superior in sensitivity, resolution and reproducibility of mask pattern and is capable of forming a pattern with a low LER.
Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method
申请人:Mori Kazunori
公开号:US20120077126A1
公开(公告)日:2012-03-29
A fluorine-containing polymer of the present invention contains a repeating unit (a) of the general formula (2) and has a mass-average molecular weight of 1,000 to 1,000,000. This polymer is suitably used in a resist composition for pattern formation by high energy ray radiation of 300 nm or less wavelength or electron beam radiation or a top coat composition for liquid immersion lithography and is characterized as having high water repellency, notably high receding contact angle.
In the formula, R
1
represents a polymerizable double bond-containing group; R
2
represents a fluorine atom or a fluorine-containing alkyl group; R
8
represents a substituted or unsubstituted alkyl group or the like; and W
1
represents a single bond, a substituted or unsubstituted methylene group or the like.
Photoactive polymer brush materials and EUV patterning using the same
申请人:International Business Machines Corporation
公开号:US10831102B2
公开(公告)日:2020-11-10
Photoactive polymer brush materials and methods for EUV photoresist patterning using the photoactive polymer brush materials are described. The photoactive polymer brush material incorporates a grafting moiety that can be immobilized at the substrate surface, a dry developable or ashable moiety, and a photoacid generator moiety, which are bound to a polymeric backbone. The photoacid generator moiety generates an acid upon exposure to EUV radiation acid at the interface, which overcomes the acid depletion problem to reduce photoresist scumming. The photoacid generator moiety can also facilitate cleavage of the photoactive polymer brush material from the substrate via an optional acid cleavable grafting functionality for the grafting moiety. The dry developable or ashable moiety facilitates complete removal of the photoactive brush material from the substrate in the event there is residue present subsequent to development of the chemically amplified EUV photoresist.