Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives exhibiting a hole mobility of up to 0.25 cm2 V−1 s−1 show promise as useful building blocks to construct next-generation high performance organic semiconductors.
Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene衍生物表现出高达0.25 cm^2 V^-1 s^-1的空穴迁移率,显示出作为构建下一代高性能有机半导体的有用组成部分的潜力。