In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to the substrate. Films with AlN and GaN buffer layers were epitaxial with preferred in-plane orientation, while those directly grown on Si(111) were found to have random in-plane orientation. A decrease in the frequency of the Raman mode and a red shift of the band-edge photoluminescence peak due to the presence of tensile strain in the film, was observed. Various possible sources for the observed biaxial strain are discussed.
在本文中,我们报告了利用脉冲激光沉积技术在
硅基底上生长
氧化锌薄膜的情况。这些薄膜直接沉积在
硅(111)上,也使用了
氮化铝和
氮化镓薄缓冲层。所有薄膜都具有与基底
法线对齐的 c 轴优先取向。使用
氮化铝和
氮化镓缓冲层的薄膜具有优先面内取向的外延,而直接生长在
硅(111)上的薄膜则具有随机面内取向。由于薄膜中存在拉伸应变,拉曼模式的频率降低,带边光致发光峰发生红移。讨论了观察到的双轴应变的各种可能来源。