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9-phenanthrylacetonitrile | 50781-52-7

中文名称
——
中文别名
——
英文名称
9-phenanthrylacetonitrile
英文别名
9-Phenanthreneacetonitrile;2-phenanthren-9-ylacetonitrile
9-phenanthrylacetonitrile化学式
CAS
50781-52-7
化学式
C16H11N
mdl
MFCD09923679
分子量
217.27
InChiKey
GTKRDFZLWHSCFW-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    103-105 °C
  • 沸点:
    437.0±14.0 °C(Predicted)
  • 密度:
    1.181±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    4.1
  • 重原子数:
    17
  • 可旋转键数:
    1
  • 环数:
    3.0
  • sp3杂化的碳原子比例:
    0.06
  • 拓扑面积:
    23.8
  • 氢给体数:
    0
  • 氢受体数:
    1

SDS

SDS:fc67da07eaf0e8ea2984aa202143885a
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上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

点击查看最新优质反应信息

文献信息

  • Investigation of the Reaction of 2-Bromo-1,4-dimethoxynaphthalene and 9-Bromophenanthrene with Nitriles Under Aryne-Forming Conditions
    作者:Marcus Hansen、Subhash P. Khanapure、Michael Fry、Dan Swartling、Edward R. Biehl
    DOI:10.1055/s-1994-25613
    日期:——
    The reaction of 2-bromo-1,4-dimethoxynaphthalene (1) and 9-bromophenanthrene (3) with nitriles 2 under base-mediated, aryne-forming conditions gives product distributions which depend upon the nature of the bromoarene, nitrile, base, and the reaction medium. Thus, treatment of 1 with arylacetonitriles 2a-d in the presence of LDA in THF or sodium amide in liquid ammonia supplies α-aryl-1,4-dimethoxy-2-naphthylacetonitriles 4a-d, presumably by the aryne arylation mechanism. In contrast, the reaction of 9-bromo-phenanthrene (3) and arylacetonitriles 2b-e with LDA in THF yields 10-arylmethyl-9- phenanthrenecarbonitriles 6b-e, most likely by the tandem addition-rearrangement pathway. When 3 reacts with 2a-c in the presence of sodium amide and liquid ammonia, α-aryl-9-phenanthrylacetonitriles 5a-c, rather than the rearranged nitriles 6a-c, are obtained. Both 1 and 3 react with alkylnitriles 2f-i and LDA-THF, sodium amide-liquid ammonia, or Caubere's sodamide base to afford aryne arylated nitriles (4f-i and 5f-i, respectively). An explanation in terms of the influence of reactants and solvent on the competition between the aryne arylation and tandem addition-rearrangement pathways is presented.
    2-溴-1,4-二甲氧基萘(1)和9-溴菲(3)与腈2在碱介导、芳炔形成条件下反应,产物的分布取决于溴芳烃、腈、碱和反应介质的性质。因此,在LDA存在下,1与芳基乙腈2a-d在四氢呋喃中或与钠胺在液态氨中反应,推测通过芳炔芳基化机制生成α-芳基-1,4-二甲氧基-2-萘基乙腈4a-d。相反,9-溴菲(3)与芳基乙腈2b-e在LDA存在下的四氢呋喃中反应,最可能通过串联加成-重排途径生成10-芳甲基-9-菲碳腈6b-e。当3与2a-c在钠胺和液态氨存在下反应时,得到的是α-芳基-9-菲乙腈5a-c,而不是重排的腈6a-c。1和3均与烷基腈2f-i以及LDA-THF、钠胺-液态氨或Caubere的钠胺碱反应,生成芳炔芳基化腈(分别为4f-i和5f-i)。本文提出了关于反应物和溶剂对芳炔芳基化和串联加成-重排途径竞争影响的解释。
  • Rapid and Simple Access to α-(Hetero)arylacetonitriles from <i>Gem</i>-Difluoroalkenes
    作者:Jun-Qi Zhang、Jiayue Liu、Dandan Hu、Jinyu Song、Guorong Zhu、Hongjun Ren
    DOI:10.1021/acs.orglett.1c04336
    日期:2022.1.21
    A scalable cyanation of gem-difluoroalkenes to (hetero)arylacetonitrile derivatives was developed. This strategy features mild reaction conditions, excellent yields, wide substrate scope, and broad functional group tolerance. Significantly, in this reaction, aqueous ammonia offers a “N” source for the “CN” reagent and entirely avoids the use of toxic cyanating reagents or metal catalysis. Hence, we
    开发了一种可扩展的偕二氟烯烃氰化为(杂)芳基乙腈衍生物的方法。该策略具有反应条件温和、产率高、底物范围广、官能团耐受性广等特点。值得注意的是,在该反应中,氨水为“CN”试剂提供了“N”源,并且完全避免使用有毒的氰化试剂或金属催化剂。因此,我们为芳基乙腈的合成提供了一种绿色替代方法。
  • Synthesis and spectroscopy of nine isomeric methylacephenanthrylenes
    作者:Patrick P. J. Mulder、Ben B. Boere、Arthur Baart、Jan Cornelisse、Johan Lugtenburg
    DOI:10.1002/recl.19931120105
    日期:——
    dehydration and, in the case of 1g and 1j, dehydrogenation. 8- And 9-methylacephenanthrylene (1h and 1i) were prepared by a Haworth synthesis starting with the reaction of methylsuccinic anhydride with acenaphthene. The spectroscopic properties of acephenanthrylene and its methyl derivatives were investigated with mass spectrometry, 1H NMR and UV-VIS spectroscopy. According to the 1H NMR spectra, steric
    描述了九种异构的甲基取代的对苯二甲苯的合成。使用了三种不同的方法。通过对苯二酚(2)和4,5,7,8,9,10-六氢对苯二甲酸(17)的甲酰化反应制得1-,2-和6-甲基对苯二甲苯(1a,1c和1f)),然后进行Wolff-Kishner还原和脱氢反应。通过用甲基锂处理相应的苯乙酮,然后进行脱水,然后脱水,在1g和1j的情况下进行脱氢,从而合成4-,5-,7-和10-甲基对苯二甲苯(1d,1e,1g和1j)。通过Haworth合成,从甲基琥珀酸酐与的反应开始,制备8-和9-甲基苯并菲(1h和1i)。通过质谱,1 H NMR和UV-VIS光谱研究了对苯乙撑及其甲基衍生物的光谱性质。根据1 H NMR光谱,甲基和附近质子之间的空间位阻按以下顺序减小:1、10> 6> 7> 3> 4、5、8、9。
  • CHEMICAL MECHANICAL POLISHING AND WAFER CLEANING COMPOSITION COMPRISING AMIDOXIME COMPOUNDS AND ASSOCIATED METHOD FOR USE
    申请人:Lee Wai Mun
    公开号:US20090130849A1
    公开(公告)日:2009-05-21
    A composition and associated method for chemical mechanical planarization (or other polishing) is described. The composition contains an amidoxime compound and water. The composition may also contain an abrasive and a compound with oxidation and reduction potential. The composition is useful for attaining improved removal rates for metal, including copper, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications.
    本文描述了一种化学机械平整化(或其他抛光)的组合物及其相关方法。该组合物含有一种酰胺肟化合物和水。该组合物还可以含有磨料和具有氧化还原潜力的化合物。该组合物可用于在金属CMP中获得改进的金属去除速率,包括铜、屏障材料和金属CMP中的介电层材料。该组合物在金属CMP应用的相关方法中特别有用。
  • METHODS OF CLEANING SEMICONDUCTOR DEVICES AT THE BACK END OF LINE USING AMIDOXIME COMOSITIONS
    申请人:Lee Wai Mun
    公开号:US20100043823A1
    公开(公告)日:2010-02-25
    The present invention relates to aqueous compositions comprising amidoxime compounds and methods for cleaning plasma etch residue from semiconductor substrates including such dilute aqueous solutions. The compositions of the invention may optionally contain one or more other acid compounds, one or more basic compounds, and a fluoride-containing compound and additional components such as organic solvents, chelating agents, amines, and surfactants. The invention also relates to a method of removing residue from a substrate during integrated circuit fabrication.
    本发明涉及含有酰胺肟化合物的水性组合物及其清洗半导体衬底上等离子体刻蚀残留物的方法,包括这种稀释的水性溶液。本发明的组合物可以选择性地含有一种或多种其他酸性化合物、一种或多种碱性化合物、含氟化合物和其他成分,如有机溶剂、螯合剂、胺和表面活性剂。本发明还涉及一种在集成电路制造过程中从衬底上去除残留物的方法。
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