Novel photoresist monomers, polymers thereof and photoresist compositions using the same
申请人:Hyundai Electronics Industries Co., Ltd.
公开号:US20030144567A1
公开(公告)日:2003-07-31
The present invention provides compounds represented by formulas 1a and 1b; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G:
1
where R
1
, R
2
and R
3
are those defined herein.
本发明提供了式 1a 和 1b 所代表的化合物;以及由其衍生的光阻聚合物。本发明者发现,由式 1a 和 1b 的化合物或其混合物衍生的光刻胶聚合物具有酸性保护基团,具有优异的耐久性、抗蚀刻性、再现性、粘合性和分辨率,因此适用于使用 KrF、ArF、VUV、EUV、电子束和 X 射线等深紫外光源的光刻工艺,可用于形成 4G 和 16G DRAM 以及 1G 以下 DRAM 的超精细图案:
1
其中 R
1
, R
2
和 R
3
的定义。