Decahydro-1,4-methanonaphthalen-2-ol | 155820-90-9

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: Decahydro-1,4-methanonaphthalen-2-ol
• 英文别名: tricyclo[6.2.1.02,7]undecan-9-ol
• CAS: 155820-90-9
• 化学式: C₁₁H₁₈O
• 分子量: 166.26
• InChiKey: RYWJNOPFORZELZ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• PREPARATION OF KETONE CONTAINING CYCLIC COMPOUNDS
  申请人：SABIC Innovative Plastics IP B.V.

  公开号：EP1732969B1

  公开（公告）日：2011-02-23
• (Meth)Acrylate, Polymer and Resist Composition
  申请人：Ootake Atsushi

  公开号：US20080003529A1

  公开（公告）日：2008-01-03

  A polymer contains a constituent unit having a specific acetal skeleton. This polymer is able to be used as a resist resin in DUV excimer laser lithography, electron beam lithography, EUV lithography, or the like.
• (METH)ACRYLATE, POLYMER AND RESIST COMPOSITION
  申请人：Ootake Atsushi

  公开号：US20090226851A1

  公开（公告）日：2009-09-10

  A polymer contains a constituent unit having a specific acetal skeleton. This polymer is able to be used as a resist resin in DUV excimer laser lithography, electron beam lithography, EUV lithography, or the like.
• COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS
  申请人：Yamagishi Takanori

  公开号：US20100047710A1

  公开（公告）日：2010-02-25

  The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer. The copolymer for immersion lithography has, at least, a repeating unit (A) that generates an alkali-soluble group by removing protecting group through action of an acid, and a repeating unit (B) having a lactone structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate (hereinafter may be abbreviated as “PGMEA”) is applied to a wafer and then heated to form a thin film, and a 15-μL droplet of pure water is added onto the thin film, the inclination of the wafer at the time when the water droplet starts to move is 35° or less, or the contact angle of the top edge of the water droplet at the time when the water droplet starts to move is 64° or more.
• US8088875B2
  申请人：——

  公开号：US8088875B2

  公开（公告）日：2012-01-03