The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm
2
/Vs—some of the highest reported to date for n-type organic semiconductors.
新的
氟碳功能化和/或杂环改性的聚
噻吩,特别是α,ω-双
氟己基六
噻吩DFH-6T可以直接高产率和纯度制备。将这些修饰引入到
噻吩核心可以提高热稳定性和挥发性,增加电子亲和力,相比先前艺术中未经修改的组分。蒸发膜表现为n型半导体,可用于制备具有FET迁移率˜0.01 cm2/Vs的薄膜晶体管-这是迄今为止报道的n型有机半导体中最高的一些值。