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| 168289-46-1

中文名称
——
中文别名
——
英文名称
——
英文别名
——
化学式
CAS
168289-46-1
化学式
C9H27SeSi4*In
mdl
——
分子量
441.435
InChiKey
LQOIMUJDXJXJEB-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.97
  • 重原子数:
    15.0
  • 可旋转键数:
    3.0
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    0.0
  • 氢给体数:
    0.0
  • 氢受体数:
    0.0

反应信息

  • 作为产物:
    描述:
    cyclopentadienylindium(I) 、 Trimethyl-[selanyl-bis(trimethylsilyl)silyl]silane正己烷 为溶剂, 以84%的产率得到
    参考文献:
    名称:
    Synthesis and Characterization of Group 13 and 15 Selenolates and Tellurolates and the x-ray Crystal Structures of Ga[TeSi(SiMe3)3]3, In[SeC(SiMe3)3]3, {In[SeSi(SiMe3)3]3}2(.mu.-DMPE), and P[SeSi(SiMe3)3]3
    摘要:
    A broad range of chalcogenolate complexes of group 13 and 15 elements have been isolated and studied. Metathesis of AlEt(2)Cl with (THF)LiSeSi(SiMe(3))(3) gave (THF)AlEt(2)[SeSi(SiMe(3))(3)] in good yield. Chalcogenolysis of Al[N(SiMe(3))(2)](3) With 3 equiv of HESi(SiMe(3))(3) (E = Se, Te) afforded Al[ESi(SiMe(3))(3)](3) (E = Se, Te). Treatment of GaCl3 with 3 equiv of (THF)(2)LiTeSi(SiMe(3))3 produced the homoleptic species Ga[TeSi(SiMe(3))(3)](3); likewise, addition of 3 equiv of (DME)LiSeC(SiMe(3))(3) to InCl3 yielded In[SeC(SiMe(3))(3)](3). Reaction of InCl3 with 3 equiv of (THF)(2)-LiSeSi(SiMe(3))(3) produced (THF)In[SeSi(SiMe(3))(3)](3) in low yield. Homoleptic chalcogenolates, In[ESi(SiMe(3))(3)](3) (E = Se, Te) were prepared by chalcogenolysis of InCp(3) (Cp = eta(5)-C5H5). Addition of THF, pyridine, or TMEDA (N,N,N',N'-tetramethylethylenediamine) to In[SeSi(SiMe(3))(3)](3) gave 1:1 adducts, (L)In[SeSi(SiMe(3))(3)](3) (L = THF, pyridine, TMEDA). Addition of DMPE (1,2-bis(dimethylphosphino)ethane) to In[SeSi(SiMe(3))(3)](3), produced a 1:1 complex In[SeSi(SiMe(3))(3)](3)(DMPE) that was characterized in solution by NMR spectroscopy; attempts to isolate the complex yielded instead the crystalline 2:1 adduct {In [SeSi(SiMe(3))(3)](3)}(2)(u-DMPE), whose X-ray structure was determined. Indium(I) complexes InESi(SiMe(3))3 (E = Se, Te) were isolated from either the metathesis of InCl with (THF)(2)LiESi(SiMe(3))3 or chalcogenolysis with InCp. Likewise, chalcogenolysis with TlCp produced TlESi(SiMe(3))3 (E = Se, Te). Reaction of PCl3 with (THF)(2)LiSeSi(SiMe(3))(3) produced P[SeSi(SiMe(3))(3)](3) in good yield. The arsenic derivative As[SeSi(SiMe(3))(3)](3) was isolated from the reaction of As(NMe(2))3 and 3 equiv of selenol. Similarly, the antimony and bismuth complexes M[ESi(SiMe(3))(3)](3) (M = Sbt E = Se, Te; M = Bi, E = Se, Te) were prepared in good yields by chalcogenolysis with Sb(NMe(2))3 or Bi[N(SiMe(3))(2)](3). Crystallographic data are as follows. Ga[TeSi(SiMe(3))(3)](3): monoclinic, P2(1)/c, Z = 4, a = 24.235(4) Angstrom, b = 13.808(3) Angstrom, c = 18.689(4) Angstrom, beta = 106.424(16)degrees, R = 0.0926, R(W) = 0.0731. In[SeC(SiMe(3))(3)](3): triclinic, P $($) over bar$$ l, Z = 2, a = 13.772(4) Angstrom, b = 13.778(4) Angstrom, c = 16.026(4) Angstrom, alpha = 74.25(2)degrees, beta = 75.27(2)degrees, gamma = 62.12(2)degrees, R = 0.0424, R(W) = 0.0476. {In[SeSi(SiMe(3))(3)](3)}(2)(u-DMPE): triclinic, Pl $($) over bar$$, Z = 2, a = 13.655(3) Angstrom, b = 13.8323(20) Angstrom, c = 18.442(3) Angstrom, alpha = 97.874(13)degrees, beta = 104.066(16)degrees, gamma = 113.708(15)degrees, R = 0.0323, R(W) = 0.0332. P[SeSi(SiMe(3))(3)](3): monoclinic, P2(l)/c, Z = 6, a = 22.706(4) Angstrom, b = 13.959(5) Angstrom, c = 17.619(3) Angstrom, beta = 93.851(14)degrees, R = 0.0554, R(W) = 0.0463.
    DOI:
    10.1021/ic00123a021
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