2-(4-sec.-Butylphenyl)-2-propanol | 37920-18-6

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 2-(4-sec.-Butylphenyl)-2-propanol
• 英文别名: 2-(4-Butan-2-ylphenyl)propan-2-ol
• CAS: 37920-18-6
• 化学式: C₁₃H₂₀O
• 分子量: 192.301
• InChiKey: UQAXVZHQNKDTRP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.3
• 重原子数：
  14
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160090355A1

  公开（公告）日：2016-03-31

  A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R 01 is a monovalent hydrocarbon group, m is 0, 1 or 2, k is an integer: 0≦k≦5+4m, R 101 , R 102 and R 103 are a monovalent hydrocarbon group, or at least two of R 101 , R 102 and R 103 may bond together to form a ring with the sulfur atom, and L is a single bond, ester, sulfonic acid ester, carbonate or carbamate bond. A resist composition comprising the sulfonium salt as PAG exhibits a very high resolution when processed by EB and EUV lithography. A pattern with minimal LER is obtainable.

  提供一种化学式为（0-1）的磺鎓盐，其中W是烷基或芳基，R01是一价碳氢基团，m为0、1或2，k为整数：0≦k≦5+4m，R101、R102和R103是一价碳氢基团，或者R101、R102和R103中至少两个可以相互结合形成与硫原子的环，L是单键、酯、磺酸酯、碳酸酯或氨基甲酸酯键。包含磺鎓盐作为PAG的抗蚀组成物在经过电子束或极紫外光刻过程时表现出非常高的分辨率。可获得具有最小LER的图案。
• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180180998A1

  公开（公告）日：2018-06-28

  A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

  提供一种负型光刻胶组合物，包括具有公式(A)的磺化物化合物和基础聚合物。该光刻胶组合物在图案形成期间表现出高分辨率，并形成具有最小LER的图案。
• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME
  申请人：TAKAHASHI Hidenori

  公开号：US20110318693A1

  公开（公告）日：2011-12-29

  An embodiment of the composition contains a resin (P) containing a repeating unit (A) that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid. The repeating unit (A) contains a cation structure with a monocyclic or polycyclic heterocycle containing a nitrogen atom.

  该组合物的实施例包含一种树脂（P），其中包含一个重复单元（A），当暴露于光致射线或辐射时，该单元（A）被配置为分解以产生酸。 重复单元（A）包含具有含氮杂环的单环或多环阳离子结构。
• Fluoro-alcohol additives for orientation control of block copolymers
  申请人：International Business Machines Corporation

  公开号：US10040879B2

  公开（公告）日：2018-08-07

  A film layer comprising a high-chi (χ) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0 Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

  在对自组装嵌段聚合物的畴具有中性润湿性的基底表面上制备了由用于自组装的高驰（χ）嵌段共聚物和含六氟丙醇的表面活性聚合物（SAP）组成的薄膜层。该嵌段共聚物包括至少一个聚碳酸酯嵌段和至少一个其他嵌段（如取代或未取代的苯乙烯基嵌段）。薄膜层的上表面与大气接触，可自组装形成相对于底层表面具有垂直取向的片状或圆柱状畴纹。缺乏 SAP 的薄膜还能形成其他形态（如高度为 1.0 Lo 的岛屿和洞）。SAP 能优先与包含聚碳酸酯块的畴混溶并降低其表面能。
• NEGATIVE-TONE RESIST COMPOSITIONS AND MULTIFUNCTIONAL POLYMERS THEREIN
  申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

  公开号：US20160070169A1

  公开（公告）日：2016-03-10

  A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.