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3-Ethyl-3-<4-methoxy-phenyl>-acrylsaeure | 21758-10-1

中文名称
——
中文别名
——
英文名称
3-Ethyl-3-<4-methoxy-phenyl>-acrylsaeure
英文别名
3-(4-methoxy-phenyl)-pent-2-enoic acid;3-(4-Methoxy-phenyl)-pent-2-ensaeure;3-(4-Methoxyphenyl)pent-2-enoic acid
3-Ethyl-3-<4-methoxy-phenyl>-acrylsaeure化学式
CAS
21758-10-1
化学式
C12H14O3
mdl
MFCD09889443
分子量
206.241
InChiKey
PNGLWXCBVRIOPB-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.9
  • 重原子数:
    15
  • 可旋转键数:
    4
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.25
  • 拓扑面积:
    46.5
  • 氢给体数:
    1
  • 氢受体数:
    3

反应信息

点击查看最新优质反应信息

文献信息

  • CuH-Catalyzed Asymmetric Reductive Amidation of α,β-Unsaturated Carboxylic Acids
    作者:Achim Link、Yujing Zhou、Stephen L. Buchwald
    DOI:10.1021/acs.orglett.0c02064
    日期:2020.7.17
    The direct enantioselective copper hydride (CuH)-catalyzed synthesis of β-chiral amides from α,β-unsaturated carboxylic acids and secondary amines under mild reaction conditions is reported. The method utilizes readily accessible carboxylic acids and tolerates a variety of functional groups in the β-position including several heteroarenes. A subsequent iridium-catalyzed reduction to γ-chiral amines
    报道了在温和的反应条件下,由α,β-不饱和羧酸和仲胺直接对映选择性氢化(CuH)催化合成β-手性酰胺。该方法利用了容易获得的羧酸,并能耐受β位的各种官能团,包括几个杂芳烃。随后可以在同一烧瓶中进行催化的还原为γ-手性胺,而无需纯化中间体酰胺。
  • (E)-Selective Horner–Wadsworth–Emmons reaction of aryl alkyl ketones with bis(2,2,2-trifluoroethyl)phosphonoacetic acid
    作者:Shigeki Sano、Yuka Takemoto、Yoshimitsu Nagao
    DOI:10.1016/j.tetlet.2003.09.185
    日期:2003.12
    The stereoselective Horner–Wadsworth–Emmons reaction of aryl alkyl ketones with bis(2,2,2-trifluoroethyl)phosphonoacetic acid utilizing lithium hexamethyldisilazide in DMF afforded (E)-α,β-unsaturated carboxylic acids as the major products.
    利用六甲基二叠氮DMF中进行的芳基烷基酮与双(2,2,2-三氟乙基)膦乙酸的立体选择性Horner-Wadsworth-Emmons反应得到(E)-α,β-不饱和羧酸作为主要产物。
  • Diffusional Creep: Stresses and Strain Rates in Thin Films and Multilayers
    作者:D. Josell、T. P. Weihs、H. Gao
    DOI:10.1557/mrs2002.18
    日期:2002.1
    Abstract

    In this article, we discuss creep deformation as it relates to thin films and multilayer foils. We begin by reviewing experimental techniques for studying creep deformation in thin-film geometries, listing the pros and cons of each; then we discuss the use of deformation-mechanism maps for recording and understanding observed creep behavior. We include a number of cautionary remarks regarding the impact of microstructural stability, zero-creep stresses, and transient-creep strains on stress–strain rate relationships, and we finish by reviewing the current state of knowledge for creep deformation in thin films. This includes both thin films that are heated on substrates as well as multilayer films that are tested as freestanding foils.

    摘要

    本文讨论了与薄膜和多层箔有关的蠕变变形。我们首先回顾了用于研究薄膜几何形态下蠕变变形的实验技术,列出了每种技术的优缺点;然后我们讨论了使用变形机制图来记录和理解观察到的蠕变行为。我们包括了一些关于微观结构稳定性、零蠕变应力和瞬态蠕变应变对应力-应变率关系的影响的警告性言论,最后回顾了目前关于薄膜蠕变变形的知识状态。这既包括在基板上加热的薄膜,也包括作为自由箔进行测试的多层膜。

  • US6004988A
    申请人:——
    公开号:US6004988A
    公开(公告)日:1999-12-21
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