Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same
申请人:Samsung Electronics Co., Ltd.
公开号:US10829690B2
公开(公告)日:2020-11-10
Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture. Further disclosed is a method of fabricating a semiconductor device that includes providing a pattern defining a trench, forming a metal material film on the pattern to fill the trench, and performing CMP of the metal material film using the slurry composition.
公开了一种用于化学机械抛光(CMP)的浆料组合物,其中包括富勒烯醇和氢氧化烷基铵的复合物作为抛光颗粒。这种浆料组合物具有优异的抛光性能,可以低成本大量制备。还公开了一种制备该浆料组合物的方法,包括通过使氢氧化烷基铵、过氧化氢和富勒烯反应获得富勒烯醇复合物和未反应的过氧化氢的混合物,通过向混合物中加入过氧化氢分解催化剂颗粒去除未反应的过氧化氢,通过过滤将过氧化氢分解催化剂颗粒从混合物中分离出来,以及向混合物中加入抛光添加剂。进一步公开了一种制造半导体器件的方法,该方法包括提供限定沟槽的图案,在图案上形成金属材料膜以填充沟槽,以及使用浆料组合物对金属材料膜进行 CMP。