3-Acetoxy-bicyclo<2.2.1>heptan-2,6-sulfon | 15732-51-1

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 异戊烯醇脂质
• 英文名称: 3-Acetoxy-bicyclo<2.2.1>heptan-2,6-sulfon
• 英文别名: (5,5-Dioxo-4-oxa-5lambda6-thiatricyclo[4.2.1.03,7]nonan-2-yl) acetate；(5,5-dioxo-4-oxa-5λ6-thiatricyclo[4.2.1.03,7]nonan-2-yl) acetate
• CAS: 15732-51-1
• 化学式: C₉H₁₂O₅S
• 分子量: 232.257
• InChiKey: CXLLPZNRNAUFNJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.3
• 重原子数：
  15
• 可旋转键数：
  2
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.89
• 拓扑面积：
  78
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR
  申请人：Seshimo Takehiro

  公开号：US20100121077A1

  公开（公告）日：2010-05-13

  A compound represented by general formula (I); and a compound represented by general formula (b1-1). wherein Q 1 represents a divalent linkage group or a single bond; Y 1 represents an alkylene group which may have a substituent or a fluorinated alkylene group which may have a substituent; X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent, and has an —SO 2 — bond in the structure thereof; M − represents an alkali metal ion; and A + represents an organic cation.

  一个由通式(I)表示的化合物；和一个由通式(b1-1)表示的化合物。其中，Q1代表一个二价连接基团或一个单键；Y1代表一个可能带有取代基的烷基基团或一个可能带有取代基的氟代烷基基团；X代表一个含有取代基的3到30个碳原子的环状基团，并且在其结构中具有一个—SO2—键；M−代表一种碱金属离子；A+代表一个有机阳离子。
• Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent
  申请人：JSR CORPORATION

  公开号：US11204552B2

  公开（公告）日：2021-12-21

  A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; R1 represents a σ ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5×10−28 m3. [AxMR1y]  (1)

  一种辐射敏感的组合物包括：第一聚合物，具有包括酸敏感基团的第一结构单元;和第一化合物，包括金属阳离子和第一阴离子，该第一阴离子是酸的共轭碱。该酸的pKa不大于0。该酸优选为磺酸，硝酸，有机氮酸，二磺基亚胺酸或其组合物。第一化合物优选由式（1）表示。在式（1）中，M表示金属阳离子; A表示第一阴离子; x为1至6的整数; R1表示σ配体; y为0至5的整数，且总和：x+y不大于6。该酸的范德华体积优选不小于2.5×10−28 m3。[AxMR1y]  (1)
• PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME
  申请人：Aqad Emad

  公开号：US20110269070A1

  公开（公告）日：2011-11-03

  New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, photoacid generators that comprise 1) a SO 3 − moiety; 2) one or more fluorinated carbons; and 3) one or more of the fluorinated carbons either directly or indirectly substituted by an ester keto group.

  提供了合成光酸发生剂化合物（“PAGs”）的新方法，新的光酸发生剂化合物和包含这种PAG化合物的光阻组合物。在特定方面，光酸发生剂包括1）SO3-官能团；2）一个或多个氟化碳；以及3）一个或多个氟化碳直接或间接地被酯基酮基取代。
• POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
  申请人：MATSUMIYA Tasuku

  公开号：US20120329969A1

  公开（公告）日：2012-12-27

  A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
• US8124313B2
  申请人：——

  公开号：US8124313B2

  公开（公告）日：2012-02-28