A photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure:
wherein R
1
, R
2
, R
3
and R
5
are each a hydrogen atom or a methyl group; R
4
is an acid-labile group or one of a specified subset of alicyclic hydrocarbon groups, alicyclic hydrocarbon groups, or hydrocarbon groups; R
6
is a hydrogen atom or one of a specified subset of hydrocarbon groups or alicyclic hydrocarbon groups; x, y and z are optional values which meet x+y+z=1, 0
一种用于光刻的光阻材料,使用220纳米或更短波长的光,包括至少一种由下式(2)表示的聚合物和用于曝光生成酸的光酸发生剂:其中,R1、R2、R3和R5分别为氢原子或甲基基团;R4是酸敏基团或指定子集的脂环烃基团、脂环烃基团或烃基团之一;R6是氢原子或指定子集的烃基团或脂环烃基团之一;x、y和z是可选值,满足x+y+z=1,0
RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND
申请人:Tokyo Ohka Kogyo Co., Ltd.
公开号:EP2584409A1
公开(公告)日:2013-04-24
According to the present invention, there are provided a resist composition which can form a very fine resist pattern with excellent lithography properties, a new polymeric compound useful for the resist composition, and a compound useful as a monomer for the polymeric compound. The aforementioned resist composition contains a polymeric compound (A) containing a structural unit (a0) represented by general formula (a0) shown below. In the formula (a0), A is an anion represented by the general formula (1) or (2).
根据本发明,提供了一种可形成具有优异光刻性能的极精细抗蚀剂图案的抗蚀剂组合物、一种可用于该抗蚀剂组合物的新型高分子化合物,以及一种可用作该高分子化合物单体的化合物。上述抗蚀剂组合物含有一种聚合物化合物(A),该化合物含有由下图所示通式(a0)表示的结构单元(a0)。在式 (a0) 中,A 是通式 (1) 或 (2) 所代表的阴离子。
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