1,3 dioxolane protected 2-isopropylthioxanthone | 1314556-12-1

• 物质功能分类: 有机原料 - 螺环化合物
• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并噻喃类
• 英文名称: 1,3 dioxolane protected 2-isopropylthioxanthone
• 英文别名: DITX；2'-Propan-2-ylspiro[1,3-dioxolane-2,9'-thioxanthene]
• CAS: 1314556-12-1
• 化学式: C₁₈H₁₈O₂S
• 分子量: 298.406
• InChiKey: ZPPFWTLVRXNZGG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.1
• 重原子数：
  21
• 可旋转键数：
  1
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  43.8
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  9,9-Dimethoxy-2-propan-2-ylthioxanthene 、 乙二醇 在 camphor-10-sulfonic acid 作用下， 以 四氢呋喃 为溶剂， 以1078 g的产率得到1,3 dioxolane protected 2-isopropylthioxanthone
  参考文献：
  名称：

  PHOTOINITIATED REACTIONS

  摘要：

  本发明公开了一种用于光引发可转化反应底物的转化方法。该方法包括一个初始步骤，在该步骤中，底物中存在的受保护酮光引发剂物种被去保护，形成相应的酮光引发剂物种，以便在该方法的后续光引发反应中使用。光引发剂的酮基通过未取代的1,3-二氧兰基团进行保护。还公开了可用于该方法的组合物，受保护酮光引发剂在光引发反应中的使用，以及受保护酮光引发剂本身。

  公开号：

  US20130105297A1

文献信息

• CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
  申请人：OSAKA UNIVERSITY

  公开号：US20170052449A1

  公开（公告）日：2017-02-23

  A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

  一种图案形成方法包括将一种化学放大型光刻胶材料制成的感光树脂组成物的预定区域图案暴露于第一种放射性射线中，该放射性射线是电离辐射或波长不大于400 nm的非电离辐射。图案化暴露的光刻胶材料膜被洪水式暴露于第二种放射性射线中，该放射性射线是波长大于图案化暴露的非电离辐射的波长和大于200 nm的非电离辐射。该化学放大型光刻胶材料包括基础组分和能够在暴露时生成辐射敏感的敏化剂和酸的生成组分。生成组分包括辐射敏感的敏化剂生成剂。辐射敏感的敏化剂生成剂包括由式(A)表示的化合物。
• Chemically amplified resist material and resist pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10018911B2

  公开（公告）日：2018-07-10

  A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.

  一种化学放大抗蚀剂材料包括一种在酸的作用下能溶于或不溶于显影液的聚合物成分，以及一种在曝光时能产生辐射敏感敏化剂和酸的生成成分。生成组件中的辐射敏感性酸和敏化剂生成剂或辐射敏感性酸生成剂包括辐射敏感性第一化合物和辐射敏感性第二化合物。第一化合物包括第一鎓阳离子和第一阴离子，第二化合物包括第二鎓阳离子和不同于第一阴离子的第二阴离子。第一鎓阳离子还原成自由基时释放的能量和第二鎓阳离子还原成自由基时释放的能量均小于 5.0 eV。
• Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
  申请人：TOKYO ELECTRON LIMITED

  公开号：US10025187B2

  公开（公告）日：2018-07-17

  A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

  根据本发明，一种光敏化学放大型抗蚀剂材料用于两阶段曝光光刻工艺，它包含(1)可显影碱成分和(2)通过曝光产生光敏剂和酸的成分。在由(a)酸-光敏剂发生器、(b)光敏剂前体和(c)光酸发生器组成的三个组件中，上述组件只包含(a)组件、任意两个组件或(a)至(c)的所有组件。
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
• US9939729B2
  申请人：——

  公开号：US9939729B2

  公开（公告）日：2018-04-10