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DTBPI-CS | 193345-23-2

中文名称
DTBPI-CS
中文别名
——
英文名称
Bis(tert-butylphenyl)iodonium 10-camphorsulfonate
英文别名
bis(2-tert-butylphenyl)iodanium;(7,7-dimethyl-2-oxo-1-bicyclo[2.2.1]heptanyl)methanesulfonate
DTBPI-CS化学式
CAS
193345-23-2
化学式
C30H41IO4S
mdl
——
分子量
624.6
InChiKey
GLZIUPBSZFTZJT-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.34
  • 重原子数:
    36
  • 可旋转键数:
    5
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.57
  • 拓扑面积:
    82.6
  • 氢给体数:
    0
  • 氢受体数:
    4

文献信息

  • AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY
    申请人:DiPietro Richard Anthony
    公开号:US20080174051A1
    公开(公告)日:2008-07-24
    A molding composition and a method of forming an pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.
    一种成型组合物和形成图案的方法。该方法包括在基板上形成芳香族二乙烯醚成型组合物的成型层;将具有凸起图案的模板压入成型层中,成型层填充凸起图案中的空隙,模板不接触基板;将成型层暴露于光致辐射下,光致辐射将成型层转化为具有厚和薄区域的固化成型层,与凸起图案相对应;移除模板;用回填材料填充凸起图案的薄区域;移除未被回填材料保护的成型层区域,以暴露基板区域;在暴露的基板区域中形成沟槽;并移除任何剩余的成型层和回填材料。成型层和基板之间可以使用转移层。
  • Positive photoresists containing crosslinked polymers
    申请人:Shipley Company LLC
    公开号:EP1126321A1
    公开(公告)日:2001-08-22
    The invention provides novel cross-linked polymers and positive chemically-amplified photoresist compositions that comprise a photoactive component and such cross-linked polymers. Resists of the invention can exhibit enhanced lithographic results relative to comparable compositions where the polymers are not crosslinked.
    本发明提供了新型交联聚合物以及由光活性成分和此类交联聚合物组成的正化学扩增光刻胶组合物。与未交联聚合物的同类组合物相比,本发明的光刻胶可获得更好的光刻效果。
  • LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS
    申请人:International Business Machines Corporation
    公开号:EP1938149A2
    公开(公告)日:2008-07-02
  • PHOTORESIST COMPOSITION CONTAINING A LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENT
    申请人:International Business Machines Corporation
    公开号:EP1938149B1
    公开(公告)日:2010-01-27
  • Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use
    申请人:Li Wenjie
    公开号:US20060216643A1
    公开(公告)日:2006-09-28
    A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.
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