The compounds are of a class of photosensitive polymers for use in chemically amplified photoresists. These photoresists produce sharp line patterns when exposed with an ArF excimer laser. The polymer composition includes a copolymer and the photoresist composition includes a terpolymer with a photo acid generator. The resulting chemically amplified photoresist compositions have strong resistance to dry etching, possess excellent adhesion to film material, and are capable of being developed using conventional developers.
这些化合物属于一类用于
化学增感光阻的光敏聚合物。当使用ArF准分子激光暴露时,这些光敏阻剂可以产生清晰的线条图案。聚合物组成包括共聚物,光敏阻剂组成包括三元共聚物和光酸发生剂。由此产生的
化学增感光阻剂组成具有强大的耐干法蚀性能,具有优异的对薄膜材料的附着性,并能够使用传统显影剂进行显影。