[EN] PROCESS FOR THE GENERATION OF METAL- OR SEMIMETAL-CONTAINING FILMS<br/>[FR] PROCÉDÉ DE GÉNÉRATION DE FILMS CONTENANT UN MÉTAL OU UN SEMI-MÉTAL
申请人:BASF SE
公开号:WO2020244989A1
公开(公告)日:2020-12-10
The present invention is in the field of processes for preparing inorganic metal- or semimetal- containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), (III), (IV), (V), (VI), or (VII) in the gaseous state (I) (II) (III) (IV).. (V) (VI) (VII) wherein A is NR or O, E is CR'', CNR''2, N, PR''2, or SOR'', G is CR' or N, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R' and R'' are hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
本发明涉及制备无机金属或半金属含膜的过程。该过程包括(a)将金属或半金属含化合物从气态沉积到固体基底上,以及(b)使固体基底与通式(I)、(II)、(III)、(IV)、(V)、(VI)或(VII)的化合物在气态中接触,其中A为NR或O,E为CR''、CNR''2、N、PR''2或SOR'',G为CR'或N,R为烷基、烯烃基、芳基或硅基,R'和R''为氢、烷基、烯烃基、芳基或硅基。