Aethylgalliumdichlorid | 6917-79-9

• 分子结构分类: 有机化合物 - 有机金属化合物 - 金属烷基卤化物
• 英文名称: Aethylgalliumdichlorid
• 英文别名: Dichloro(ethyl)gallane
• CAS: 6917-79-9
• 化学式: C₂H₅*2Cl*Ga
• 分子量: 169.691
• InChiKey: LNVWGMSFIXSXSE-UHFFFAOYSA-L

物化性质

• 熔点：
  44 °C
• 沸点：
  64 °C(Press: 1 Torr)

计算性质

• 辛醇/水分配系数(LogP)：
  1.97
• 重原子数：
  5
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  lithium dimethylamide 、 Aethylgalliumdichlorid 以 乙醚 为溶剂， 以84%的产率得到(EtGa(NMe2)2)2
  参考文献：
  名称：

  Bis(dimethylamido) Complexes of Alkyl- and Phenylgallium. Useful Precursors to the RGa²⁺ Synthon

  摘要：

  Alkyl- and phenylbis(dimethylamido)gallium, [RGa(NMe2)(2)](2) [R = Me (1), Et (2), Bu-n (3), (n)Hx (4), and Ph (5)], were synthesized by reactions of LiNMe2 with (RGaCl2)(2). The crystal structure of compound 1 was a disordered mixture of anti and syn isomers, with the ratio of anti/syn being 64:36, which was consistent with the ratio (57:43) found in the H-1 NMR spectrum. The Ga2N2 cores of the anti and syn structures were nonplanar. H-1 NMR spectra indicated the presence of both anti and syn isomers for all of the other substituents. H-1 NMR and mass spectra indicated that a species with the general formula of R3Ga2(NMe2)(3) was formed when these compounds were heated at high temperatures.

  DOI：

  10.1021/ic010724r
• 作为产物：
  描述：

  氯化镓 、 三乙基镓 以 正戊烷 为溶剂， 以97.3%的产率得到Aethylgalliumdichlorid
  参考文献：
  名称：

  单体有机镓氮化合物。的Et化学2 GaNH [C 6 H ^ 2（2,4,6-叔丁基）3 ]与分解到金属环{EtGaNH [C 6 H ^ 2（4,6-叔丁基）2 CME 2 CH 2 - 2]} 2和EtGa {NH [C 6 H 2（2,4,6-t-Bu）3 ]} 2

  摘要：

  两种单体镓-氮化合物Et 2 GaNH [C 6 H 2（2,4,6-t-Bu）3 ]和EtGa {NH [C 6 H 2（2,4,6-t-Bu）3 ] } 2，是通过适当地通过Et 2 GaCl或EtGaCl 2与LiNH [C 6 H 2（2,4,6-t-Bu）3 ]之间的复分解反应制备的，并已进行了充分表征。低温分子量研究表明，这两种化合物在苯溶液中均为单体，而对后者的X射线结构研究确定为单体。化合物Et 2 GaNH [C 6 H2（2,4,6-t-Bu）3 ]在室温下分解形成新的金属环衍生物GaEt 3和H 2 N [C 6 H 2（2,4,6-t-Bu）3 ]。使用1 H NMR光谱研究和X射线结构研究来阐明其结构。化合物EtGa {NH [C 6 H 2（2,4,6-t-Bu）3 ]} 2不会分解为金属环，但易于与GaEt 3反应形成Et 2 GaNH [C 6 H 2（ 2

  DOI：

  10.1021/om990136+

文献信息

• Transition Metal Coordinated Al(X)L₂ and Ga(X)L₂ Fragments
  作者：Roland A. Fischer、Markus M. Schulte、Jurij Weiss、Laszlo Zsolnai、Albrecht Jacobi、Gottfried Huttner、Gernot Frenking、Christian Boehme、Sergei F. Vyboishchikov

  DOI：10.1021/ja9716463

  日期：1998.2.1

  neutral intermetallic systems (CO)nM−Ga[X(L)2] (M = Cr, Mo, W, Fe; n = 4, 5; X = Cl, Me, Et; L2 = tmeda, dme, bipy, tBu-dab, thf2) (1−14) and (CO)5M-Al[X(L)2] (M = Cr, Mo, W; X = Cl, Et, iBu; L2 = tmeda, tmpda) (15−20, 23, 24). The chloro derivatives can be converted to the corresponding hydrido or tetrahydridoboranato species which is exemplarily shown by compounds 21 and 22. In the case of R2GaCl

  金属羰基二价阴离子在 thf 中与第 13 族氯化物 XmECl3-m（E = Al、Ga；X = Cl、Me、Et、iBu；m = 0、1）反应生成单阴离子物质 [(CO)nM-EXmCl2-m ]- (M = Fe, Cr, Mo, W; n = 4, 5) 作为主要产物，在与非配位阳离子交换后可以作为无溶剂盐分离。在加入螯合路易斯碱（例如 tmeda、dme 和溶剂与二氯甲烷交换后，初级产物进行第二次盐消除反应，产生中性金属间系统 (CO)nM-Ga[X(L)2] (M = Cr, Mo, W, Fe; n = 4, 5; X = Cl, Me, Et; L2 = tmeda, dme, bipy, tBu-dab, thf2) (1−14) 和 (CO)5M-Al[X (L)2] (M = Cr, Mo, W; X = Cl, Et, iBu; L2 = tmeda, tmpda)
• Monomeric Gallium(III) Compounds Containing Three Different Ligands. Crystal and Molecular Structures of GaMeCl(acac) and GaCl[N(SiMe₃)₂](acac)
  作者：O. T. Beachley,、James R. Gardinier、Melvyn Rowen Churchill、David George Churchill、Kim M. Keil

  DOI：10.1021/om010681m

  日期：2002.3.1

  monomeric gallium(III) compounds, each containing three different ligands, have been prepared by metathetical and/or ligand redistribution reactions and identified as single compounds in benzene solution and in the solid phase, as appropriate. These compounds include GaRCl(acac) (R = Me, Et, Mes (mesityl, C6H2Me3); acac = 2,4-pentanedionato), GaCl[N(SiMe3)2](acac), and GaMe[N(SiMe3)2](acac). X-ray structural

  通过复分解和/或配体再分布反应已制备了五种单体镓（III）化合物，每种化合物包含三个不同的配体，并视情况在苯溶液和固相中鉴定为单一化合物。这些化合物包括GaRCl（acac）（R = Me，Et，Mes（mesityl，C 6 H 2 Me 3）; acac = 2,4-pentanedionato），GaCl [N（SiMe 3）2 ]（acac）和GaMe [N（SiMe 3）2 ]（acac）。GaMeCl（acac）和GaCl [N（SiMe 3）2的X射线结构研究]（acac）证实了在这些单体分子中存在与镓键合的三种不同的配体。还制备和表征了相关的衍生物GaMeCl（hfac）和GaMesCl（hfac）（hfac = 1,1,1,5,5,5-六氟戊二酮），但这些化合物在室温下缓慢分解。
• [EN] METHOD FOR STORING AND/OR TRANSPORTING GALLIUM CHLORIDE<br/>[FR] PROCÉDÉ DE STOCKAGE ET/OU DE TRANSPORT DE CHLORURE DE GALLIUM
  申请人：AKZO NOBEL CHEMICALS INT BV

  公开号：WO2019086336A1

  公开（公告）日：2019-05-09

  Method for storing and/or transporting GaCl3 involving the step of adding an aluminium compounds of the formula R3 -xAlClx, wherein R is a linear or branched alkyl group with 1-8 carbon atoms and x is 0 or 1, to said GaCl3 in an Al/Ga molar ratio of at least 0.2, thereby forming a liquid formulation, followed by introducing said liquid formulation in a container.

  将涉及向GaCl3中加入具有R3-xAlClx公式的铝化合物的步骤，其中R是具有1-8个碳原子的线性或支链烷基基团，x为0或1，以至少为0.2的Al/Ga摩尔比，从而形成液体配方，随后将该液体配方引入容器的方法。
• MCl₂ Molecules (M = Zn, Cd, Hg) Coordinated by Trifunctional E/P₂-Based FLPs (E = Ga, In): Chelating Coordination of the Metal Atoms and Activation of M–Cl Bonds by E–Cl Interactions
  作者：Marten Uebing、Alexander Hepp、Werner Uhl

  DOI：10.1021/acs.organomet.0c00300

  日期：2020.7.27

  elimination and formation of the frustrated Lewis pairs 4–6, which have two Lewis basic P atoms in their molecular backbones. These FLPs coordinated and solubilized MCl2 compounds (M = Zn, Cd, Hg) by the chelating coordination of the Zn, Cd, or Hg atoms with phosphorus. The interaction of one Cl atom with the Lewis acidic Ga or In atoms resulted in the formation of norbornane type molecular structures with

  所述phosphinylvinyl格氏试剂的Mes两个当量2 PC [氯化镁（THF）2 ═CHPh（] 2）与反应MeGaCl 2，EtGaCl 2，或MeInCl 2通过盐的消除和形成沮丧路易斯对4 - 6，其具有两个在其分子主链中的路易斯碱性P原子。这些FLP协调并溶解了MCl 2Zn，Cd或Hg原子与磷的螯合配位化合物（M = Zn，Cd，Hg）。一个Cl原子与路易斯酸性Ga或In原子的相互作用导致形成带有M–Cl–E桥（E = Ga，In）和相对弱的M–Cl键的降冰片烷型分子结构。产物在溶液中表现出令人着迷的动态行为，从而产生了高度复杂的NMR光谱。4与AuCl的反应导致Au-Cl键断裂，并使Cl原子转移到路易斯酸性Ga原子上。
• Heterocyclic organometallic compounds
  申请人：Merck Patent Gesellschaft mit Beschrankter Haftung

  公开号：US05235078A1

  公开（公告）日：1993-08-10

  The invention relates to heterocyclic organometallic compounds formula I below and to the use thereof for the production of thin films and layers on substrates by gas phase deposition. ##STR1##

  该发明涉及以下公式I的杂环有机金属化合物，以及它们用于通过气相沉积在基底上生产薄膜和层的用途。##STR1##